Ambient medium < Ambient temperature < Ambipolar diffusion

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000003 (2013)		Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene
000070 (2011)		New mixed LiGa0.5In0.5Se2 nonlinear crystal for the mid-IR
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000135 (2009)		Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000149 (2009)		Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000152 (2009)		InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000191 (2008)		Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000211 (2008)		Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000235 (2007)		Performance of InAs-based infrared photodiodes
000243 (2007)		Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces
000245 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000246 (2007)		InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000248 (2007)		High-density InSb-based quantum dots emitting in the mid-infrared
000276 (2006)		Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
000303 (2006)		Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation
000304 (2006)		Novel dual-wavelength InGaAs/GaAs/InGaP lasers : Second harmonics and competition of whispering-gallery and standard te modes
000307 (2006)		Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000354 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Ambient temperature" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Ambient temperature" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Ambient temperature
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024