Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Acceptor center »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Absorption spectrum < Acceptor center < Acceptor donor pair  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 48.
[0-20] [0 - 20][0 - 48][20-40]
Ident.Authors (with country if any)Title
000144 (2009) Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications
000153 (2009) Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures
000179 (2009) About deep impurity centers in InAs
000297 (2006) Prolonged decay of free-to-bound photoluminescence in direct band gap InGaAs and AlGaAs alloys : magnetic resonance studies
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000609 (2003) Resonant states of carbon acceptor in p-InGaAs/GaAs δ-doped quantum well heterostructure
000633 (2003) Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001549 (1993) Magnetophotoluminescence of MBE-grown InSb and InAs
001635 (1992) Photoluminescence of an epitaxial InSb film on a quasiinsulating p-type InSb substrate
001640 (1992) Optoelectronic properties of indium-doped zinc selenide
001666 (1992) Investigation of structure defects in epitaxial indium arsenide films
001744 (1991) Slow relaxation of excited acceptor states in silicon
001757 (1991) Polarization of the luminescence emitted from the surface of III-V heterostructure with a profiled substrate
001792 (1991) Interface luminescence due to above-barrier reflection in an isotypic p-InAs/P-InAsPSb heterostructure
001796 (1991) Influence of uniaxial pressure on the drag thermoelectric power of p-type InSb
001826 (1991) Electrical and photoelectric properties of InAsSbP solid solutions
001847 (1991) Behavior of ytterbium in epitaxial p-type GalnSbAs films
001848 (1991) Behavior of impurities of p-type GaInSbAs solid solutions
001892 (1990) Photoluminescence of epitaxial GaAs:In films prepared by the chloride method

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Acceptor center" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Acceptor center" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Acceptor center
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024