Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. V. Emtsev »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
V. V. Emets < V. V. Emtsev < V. V. Evstropov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000141 (2009) Photosensitivity of ZnO/CuIn3Se5 heterostructures at γ-radiation
000366 (2005) Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000391 (2005) Acceptor states in the photoluminescence spectra of n-InN
000393 (2005) A gauge invariant approach to the raman scattering in heavily doped crystals
000619 (2003) Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000690 (2003) Band gap of hexagonal InN and InGaN alloys
000848 (2002) Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply
000849 (2002) Band gap of hexagonal InN and InGaN alloys
000850 (2002) Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1)
000853 (2002) Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
000947 (2001) Radiation-induced defects in n-type GaN and InN
000C26 (1999-11-22) Experimental and theoretical studies of phonons in hexagonal InN

List of associated KwdEn.i

Nombre de
documents
Descripteur
10Indium nitrides
8Photoluminescence
7Gallium nitrides
6Binary compounds
6Semiconductor materials
5Energy gap
5Experimental study
5Ternary compounds
4Hexagonal lattices
4Monocrystals
3Absorption spectra
3Annealing
3Carrier density
3Doping
3Raman spectra
2Absorption edge
2Charge carrier trapping
2Composition effect
2Effective mass
2Excitation spectrum
2III-V semiconductors
2Narrow band gap semiconductors
1Absorption coefficients
1Acceptor center
1Carrier mobility
1Charge carrier recombination
1Charge compensation
1Charge density
1Charge fluctuation
1Chemical composition
1Copper Indium Selenides Mixed
1Coulomb interaction
1Debye temperature
1Deformation potential
1Degenerate state
1Electron charge
1Electron charge distribution
1Electronic structure
1Energy relaxation
1Free carrier
1Free electron
1Froehlich interactions
1Gamma irradiation
1Heavily doped semiconductors
1Heterostructures
1Impurities
1Indium compounds
1Infrared spectra
1Inorganic compounds
1Interband transitions
1Irradiation defect
1Layer thickness
1Localized states
1MOCVD
1MOMBE method
1Molecular beam epitaxy
1Nonstoichiometry
1Optical absorption
1Optical constants
1Optical measurement
1Optical spectrum
1Phonon dispersion relations
1Phonon spectra
1Photoconductivity
1Photoelectric effect
1Photoreflectance
1Photosensitivity
1Photovoltaic effects
1Physical radiation effects
1Proton beams
1Quantity ratio
1Quantum yield
1Radiation effects
1Reflectance
1Reflectivity
1Scanning electron microscopy
1Scattering
1Semiconductor thin films
1Shallow level
1Short circuit currents
1Specific heat
1Sum rules
1Urbach rule
1Valence bands
1Vibrational modes
1Wide band gap semiconductors
1Zinc oxide

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "V. V. Emtsev" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "V. V. Emtsev" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    V. V. Emtsev
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024