V. V. Brazhkin < V. V. Chaldyshev < V. V. Chernyshev

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000C40 (1999-10)		Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000C62 (1999-08)		Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000D12 (1999-03-15)		Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D68 (1999)		Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000E36 (1998-10)		Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
000E58 (1998-07)		Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C
000E61 (1998-07)		Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000F06 (1998-01)		High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
000F79 (1997-12)		Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates
001029 (1997-06-09)		Enhanced arsenic excess in low-temperature grown GaAs due to indium doping
001069 (1997)		Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001100 (1997)		Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films
001117 (1997)		Formation of n+-layers in undoped and indium-doped GaAs wafers by Si and Si+P ion implantation
001149 (1996-10)		Magnetic field-dependent microwave absorption due to superconducting In-Ga clusters in gallium arsenide grown by molecular-beam epitaxy
001272 (1995-12)		Spatial ordering of arsenic clusters in GaAs layers grown by molecular-beam epitaxy at low temperature
001340 (1995)		Vapour phase epitaxial growth GaAs film with a very low deep level concentration
001530 (1993)		Population inversion of spatial quantization levels in two-dimensional InAs/AlSb/GaSb systems
001568 (1993)		Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity
001569 (1993)		Feasibility of formation of In0.52Al0.48As films isoperiodic with the InP substrates by liquid phase epitaxy at low (∼650°C)
001663 (1992)		Isovalent gallium and arsenic impurity doping of InP grown by liquid-phase epitaxy
001748 (1991)		Raman scattering in epitaxial GaAs filmd doped with isovalent Bi and In impurities : influence of defects and plasmophonon damping

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List of associated KwdEn.i

Nombre de documents	Descripteur
27	Experimental study
15	Semiconductor materials
14	Gallium arsenides
12	Photoluminescence
11	Indium
11	Molecular beam epitaxy
9	III-V semiconductors
9	Inorganic compound
8	Annealing
6	Doping
5	Gallium Arsenides
5	Impurity density
5	Semiconductor doping
5	Semiconductor epitaxial layers
5	Semiconductor growth
5	TEM
4	Acceptor center
4	Epitaxial film
3	Arsenic
3	Binary compounds
3	Crystal defect density
3	Epitaxial layers
3	Indium additions
3	Indium arsenides
3	Indium compounds
3	Infrared spectra
3	Lattice parameters
3	Low temperature
3	Silicon additions
3	Thin film
3	Thin films
3	XRD
2	Antimony
2	Beryllium additions
2	Bismuth
2	Carrier density
2	Charge carrier concentration
2	Charge carrier mobility
2	Charge carrier recombination
2	Chemical composition
2	Chemical interdiffusion
2	Crystal doping
2	Donor center
2	Doped materials
2	Exciton
2	Impurity
2	Indium Phosphides
2	Interface structure
2	Ion implantation
2	Non stoichiometric composition
2	Point defects
2	Precipitation
2	Radiative recombination
2	Semiconductor superlattices
2	Silicon
2	Substrates
2	Temperature
2	Theoretical study
2	Thermal annealing
1	Absorption spectra
1	Aggregate
1	Aggregation
1	Aluminium antimonides
1	Aluminium arsenides
1	Antisite defect
1	Atomic clusters
1	Band structure
1	Carbon
1	Characterization
1	Cluster
1	Compensation
1	Crystal defects
1	Crystal growth
1	Crystal growth from vapors
1	Damping
1	Deep energy levels
1	Deep level
1	Defect states
1	Dislocation
1	Dislocation density
1	Doping profiles
1	Electric conductivity
1	Electron density
1	Energy gap
1	Energy levels
1	Frequency
1	Gallium
1	Gallium Antimonides
1	Gallium antimonides
1	Heavily doped semiconductors
1	Heterostructures
1	Hole
1	Impurity absorption spectra
1	Impurity site
1	Impurity states
1	Impurity-vacancy interactions
1	Indium Antimonides phosphides
1	Interband transitions
1	Island structure
1	LPE

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