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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Solov Ev »
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V. A. Smirnov < V. A. Solov Ev < V. A. Solovev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000152 (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000182 (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
000362 (2005) Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000363 (2005) Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
000472 (2004) InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications
000637 (2003) MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
000832 (2002) Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures
000838 (2002) Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
000847 (2002) Control by an electric field of electron-hole separation in type-II heterostructures
000978 (2001) MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Photoluminescence
6Indium arsenides
6Molecular beam epitaxy
4Aluminium antimonides
4Crystal growth from vapors
4Heterostructures
4III-V semiconductors
3Binary compounds
3Electroluminescence
3Gallium antimonides
3Indium antimonides
3XRD
2Arsenic Antimonides
2Cadmium selenides
2Epitaxial layers
2Gallium arsenides
2Quantum dots
2Quantum wells
2Semiconductor materials
2Transmission electron microscopy
1Aluminium Antimonides arsenides
1Ambient temperature
1Antimony
1Aspect ratio
1Binary compound
1Bragg reflection
1Cavitation
1Compressive stress
1Electric field effects
1Energy relaxation
1Energy-level splitting
1External fields
1Facet
1Faceting
1Far field
1Heterojunctions
1Hot electrons
1II-VI semiconductors
1IV characteristic
1Impurities
1Indium Antimonides arsenides
1Indium Arsenides
1Instability
1Light emitting diode
1Light emitting diodes
1Magnesium selenides
1Magnetic field effects
1Manganese additions
1Manufacturing processes
1Microelectronic fabrication
1Microwave radiation
1Mid infrared radiation
1Miscibility
1Monolayer
1Morphology
1Multilayers
1Nanostructure
1Nanostructured materials
1Noise
1Optical properties
1Optoelectronic devices
1Output power
1Quantum dot
1Quaternary compounds
1RHEED
1Radiative recombination
1Reactive ion etching
1Reflectance
1Relaxation time
1Room temperature
1SEM
1Scanning electron microscopy
1Semiconductor lasers
1Semimagnetic semiconductors
1Solid solutions
1Spinodal decomposition
1Spintronics
1Stacking sequence
1Strained quantum well
1Surface preparation
1Temperature effects
1Ternary compounds
1Threshold current
1Two-dimensional electron gas
1Ultrathin films
1Zeeman effect
1Zinc tellurides

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