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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « V. A. Odnoblyudov »
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V. A. Odnobludov < V. A. Odnoblyudov < V. A. Ogandzhanyan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000406 (2004-05) Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells
000417 (2004-03) Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000501 (2003-12) Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000553 (2003-05) Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000705 (2002-12) Band-Edge Line-up in GaAs/GaAsN/InGaAs Heterostructures
000709 (2002-11) Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates
000930 (2001) Thermodynamic analysis of the MBE growth of GaInAsN
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000A85 (2000-05) Power Conversion Efficiency of Quantum Dot Laser Diodes

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Gallium arsenides
8Experimental study
8Indium compounds
6Molecular beam epitaxy
4Nitrogen compounds
4Photoluminescence
4Semiconductor quantum dots
3Semiconductor heterojunctions
2Quantum well lasers
1Arsenic compounds
1Crystal defects
1Current density
1Energy gap
1Gallium compounds
1Gallium nitrides
1Indium arsenides
1Indium nitrides
1Laser cavity resonators
1Light emitting devices
1Measuring methods
1Operating mode
1Optimization
1Quantum dots
1Quaternary compounds
1Self-assembly
1Semiconductor laser arrays
1Semiconductor materials
1Semiconductor quantum wells
1Sticking coefficient
1Stoichiometry
1Temperature
1Theoretical study
1Thermodynamic analysis
1Thermodynamic model
1Transmission electron microscopy
1quantum dot lasers
1self-assembly

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