Auteurs
Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « O. N. Pashkova »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
O. N. Mittov < O. N. Pashkova < O. N. Razumovskaya  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000090 (2010) Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor
000293 (2006) Room temperature ferromagnetism in III-V and II-IV-V2 dilute magnetic semiconductors
000682 (2003) Effect of superstoichiometric Sb content on the electrical properties of InSb/α-Al2O3 photoconductive detectors
000952 (2001) Preparation, structure, and electrical properties of thin In1-xCdxSb (x = 0.001-0.003) films
000D59 (1999) Properties of InSb layers doped with Ag and Au
000D64 (1999) Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers
001132 (1997) Carrier lifetime in directionally solidified p-InSb(Ge) thin layers on AL2O3 in the range 77-300 K
001253 (1996) Electric and photoelectric properties of doped InSb/Al2O3 thin layers at 300 K

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Indium antimonides
5Experimental study
4Carrier density
4Carrier mobility
3III-V semiconductors
3Thin films
2Cadmium antimonides
2Crystal growth from melts
2Directional solidification
2Doped materials
2Doping
2Electrical conductivity
2Ferromagnetic materials
2Ferromagnetism
2Hall effect
2Manganese additions
2Semiconductor materials
2Semimagnetic semiconductors
1Adhesion
1Aluminium oxide
1Andreev reflection
1Band structure
1Binary compound
1Binary compounds
1Cadmium additions
1Chemical composition
1Concentration effect
1Crystal nucleation
1Dielectric materials
1Electrical characteristic
1Gallium antimonides
1Germanium additions
1Gold additions
1Growth mechanism
1Heterojunctions
1II-V semiconductors
1II-VI semiconductors
1IV characteristic
1Interface reaction
1Interfacial layer
1Interstitials
1Ion substitution
1Lattice parameters
1Lifetime
1Magnetic hysteresis
1Magnetization
1Multilayers
1Muon spin relaxation
1Narrow band gap semiconductors
1Noise level
1Noise reduction
1Optoelectronic device
1Oxides
1P-type conductors
1Performance evaluation
1Photoconducting device
1Photoconductivity
1Photodetector
1Photodetectors
1Photoelectric effect
1Point contacts
1Polycrystals
1Property structure relationship
1Quasiparticles
1Scattering
1Segregation
1Semiconductivity
1Silver additions
1Solid solutions
1Solid-solid interfaces
1Spin fluctuations
1Spin polarization
1Spintronics
1Stoichiometry
1Temperature effects
1Thick films
1Thin film device
1Zinc additions

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "O. N. Pashkova" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "O. N. Pashkova" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    O. N. Pashkova
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024