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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. D. Zakharov »
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N. D. Topor < N. D. Zakharov < N. D. Zhakharov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000129 (2010) Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000399 (2004-06) Spectroscopy of Exciton States of InAs Quantum Molecules
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000668 (2003) Formation specifity of InAs/GaAs submonolayer superlattice
000983 (2001) Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A59 (2000-07) Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A82 (2000-05-08) Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000D11 (1999-03-22) Optical properties of InAs quantum dots in a Si matrix

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Photoluminescence
6Indium arsenides
5Gallium arsenides
5III-V semiconductors
5Indium compounds
4Molecular beam epitaxy
3Binary compounds
3Quantum dots
3Semiconductor materials
3Semiconductor quantum dots
3Silicon
3TEM
3Ternary compounds
2Arsenic compounds
2Excitons
2High temperature
2Island structure
2Multilayers
2Nanostructures
2Output power
2Quantum dot lasers
2RHEED
2Semiconductor heterojunctions
2Threshold current
2Transmission electron microscopy
1Activation energy
1Aging
1Aluminium arsenides
1Aluminium phosphides
1Ambient temperature
1Annealing
1Beam profiles
1Chemical interdiffusion
1Crystal growth from vapors
1Current density
1Density
1Electronic structure
1Elemental semiconductors
1Exciton phonon interaction
1Far field
1Filamentation
1Fourier transformation
1Heterojunctions
1Images
1Inorganic compounds
1Integrated intensity
1Interface states
1Interface structure
1Laser diodes
1Laser materials
1Lifetime
1Light emitting diodes
1Line broadening
1Microstructure
1Mirrors
1Nanostructured materials
1Non radiative recombination
1Optical confinement
1Optical materials
1Optical properties
1Optical waveguides
1Optimization method
1Photonic band gap
1Plastics
1Quantum yield
1Refractive index
1STM
1Self organization
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor lasers
1Semiconductor quantum wells
1Spontaneous emission
1Spot size
1Strains
1Superlattices
1Temperature effects
1Transverse mode

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