Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « N. D. Il Inskaya »
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N. D. Ii Inskaya < N. D. Il Inskaya < N. D. Ilinskaya  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000115 (2010) InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
000120 (2010) Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000145 (2009) Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
000656 (2003) InAs and InAsSb LEDs with built-in cavities
001457 (1994-02) Controlling the mode composition of high-power buried InGaAsP/GaAs lasers with a wavelength of 0.8 μm
001930 (1990) Diagnostics of InGaAsP/InP heteroboundaries by Auger profiling of a chemical bevel
001C51 (1987)

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Indium Arsenides
2Binary compounds
2Experimental study
2Gallium Indium Arsenides phosphides Mixed
2III-V semiconductors
2Indium Phosphides
2Photonic crystals
2Semiconductor lasers
2Temperature dependence
1Arsenic Antimonides
1Arsenic compounds
1Auger electron spectrometry
1Binary compound
1CVD
1CW laser
1Cavity
1Chemical composition
1Chemical etching
1Design
1Emission spectrum
1Far field
1Flip chip bonding
1Gallium Arsenides
1Gallium arsenides
1Gallium phosphides
1Heterostructures
1High temperature
1Imagery
1Indium antimonides
1Indium arsenides
1Indium phosphides
1Lifetime
1Light emitting diode
1Light emitting diodes
1Measurement method
1Optical materials
1Optical waveguides
1Quantum wells
1Quaternary compounds
1Reflectivity
1Reliability
1Semiconductor laser
1Stimulated emission
1Ternary compound
1Ternary compounds
1Theoretical study
1Threshold current

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