M. P. Marchenko < M. P. Mikhailova < M. P. Petrov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 53.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000137 (2009)		Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
000150 (2009)		InSb quantum dots and quantum rings on InAs-rich surface
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000191 (2008)		Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000518 (2003-10)		Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000525 (2003-08)		Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
000529 (2003-08)		Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000530 (2003-08)		High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000594 (2003)		Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction
000633 (2003)		Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
000644 (2003)		Interface luminescence and lasing at a type II single broken-gap heterojunction
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000793 (2002)		Raman scattering study of type II GaInAsSb/InAs heterostructures
000796 (2002)		Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
000818 (2002)		Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction
000877 (2001-09-15)		Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs

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List of associated KwdEn.i

Nombre de documents	Descripteur
41	Experimental study
27	Gallium arsenides
23	Indium compounds
19	III-V semiconductors
17	Indium arsenides
17	Semiconductor heterojunctions
16	Electroluminescence
14	Heterojunctions
14	LPE
11	Indium antimonides
10	Binary compounds
10	Gallium compounds
10	Solid solutions
9	Gallium antimonides
9	Quaternary compounds
8	Heterostructures
8	Magnetoresistance
8	Photoluminescence
8	Semiconductor lasers
7	Antimony compounds
7	Energy gap
7	Photoconductivity
7	Photodiodes
7	Semiconductor materials
6	Aluminium compounds
6	Hall effect
6	Indium Arsenides
5	Gallium Antimonides arsenides
5	Semiconductor growth
4	Band structure
4	Doping
4	Electron mobility
4	Epitaxial layers
4	Indium Antimonides arsenides
4	MOVPE method
4	Quantum wells
4	Tunnel effect
3	Cadmium compounds
3	Electrical conductivity
3	Electron-hole recombination
3	IV characteristic
3	Impurity states
3	Inorganic compound
3	Localized states
3	Molecular beam epitaxy
3	Narrow band gap semiconductors
3	Quantum dots
3	Semiconductor epitaxial layers
3	Shubnikov-de Haas effect
3	VPE
3	p n junctions
2	Acceptor center
2	Ambient temperature
2	Atomic force microscopy
2	Carrier density
2	Charge carrier recombination
2	Composition effect
2	Conduction bands
2	Defect states
2	Detectivity
2	Electric conductivity
2	Electrical properties
2	Energy-level transitions
2	Experiments
2	Gallium Antimonides
2	Gallium Indium Antimonides arsenides Mixed
2	Gallium phosphide
2	Heterojunction
2	II-VI semiconductors
2	III-V compound
2	Impurities
2	Impurity density
2	Infrared detectors
2	Infrared radiation
2	Inorganic compounds
2	Interface phenomena
2	Interface states
2	Low temperature
2	Magnesium compounds
2	Magnetic field effects
2	Magnetic moments
2	Manganese
2	Nanostructured materials
2	Optical materials
2	Optical properties
2	Optoelectronic devices
2	P-type conductors
2	Photosensitivity
2	Quantum Hall effect
2	Quantum transport
2	Radiative recombination
2	Semiconducting indium compounds
2	Semiconductor quantum wells
2	Surface recombination
2	Tellurium additions
2	Temperature
2	Transmission electron microscopy
2	Tunneling
2	Zinc additions
1	Aluminium antimonides

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