B. V. Tsarenkov < B. V. Volovik < B. V. Zhuravlev

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 54.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000668 (2003)		Formation specifity of InAs/GaAs submonolayer superlattice
000674 (2003)		Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000763 (2002-03)		Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures
000766 (2002-02-15)		Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots
000884 (2001-09)		1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots
000945 (2001)		Reversibility of the island shape, volume and density in Stranski-Krastanow growth
000955 (2001)		Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000962 (2001)		Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000964 (2001)		Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
000969 (2001)		Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures
000983 (2001)		Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000987 (2001)		Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots
000996 (2001)		Entropy-driven effects in self-organized formation of quantum dots
000A18 (2001)		1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A21 (2000-12-15)		Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A36 (2000-11)		The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm
000A62 (2000-07)		Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range
000A82 (2000-05-08)		Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000A84 (2000-05)		Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000A89 (2000-05)		Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm
000A90 (2000-05)		Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells

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List of associated KwdEn.i

Nombre de documents	Descripteur
45	Experimental study
38	Gallium arsenides
38	Photoluminescence
30	Indium compounds
24	III-V semiconductors
22	Semiconductor quantum dots
20	Quantum dots
18	Molecular beam epitaxy
17	Indium arsenides
14	Binary compounds
13	Semiconductor materials
11	Island structure
10	TEM
9	Theoretical study
8	Semiconductor growth
8	Semiconductor lasers
6	Electroluminescence
6	Quantum well lasers
6	Semiconductor heterojunctions
6	Ternary compounds
5	Aluminium compounds
5	Self organization
4	Binary compound
4	Crystal growth from vapors
4	Current density
4	Ground states
4	Heteroepitaxy
4	Optical properties
4	Quantum dot
4	Semiconductor epitaxial layers
3	Arsenic compounds
3	Capacitance
3	Epitaxial layers
3	Excited states
3	Excitons
3	Growth mechanism
3	III-V compound
3	Integrated circuit
3	Interface states
3	Microelectronic fabrication
3	Nanostructures
3	Optical pumping
3	Semiconductor quantum wells
3	Transmission electron microscopy
2	Aluminium arsenides
2	Atomic force microscopy
2	Energy-level transitions
2	Experiments
2	Gallium Arsenides
2	Heterostructures
2	Indium Arsenides
2	Laser diodes
2	Microstructure
2	Monolayers
2	Multilayers
2	Nanometer scale
2	Nanostructured materials
2	Output power
2	Photoconductivity
2	Quantum wells
2	RHEED
2	STM
2	Schottky barriers
2	Temperature dependence
2	Temperature effects
2	Ultrathin films
2	Waveguide lasers
2	self-assembly
1	Adatoms
1	Annealing
1	Antimony compounds
1	Carrier lifetime
1	Carrier mobility
1	Characterization
1	Charge carriers
1	Chemical etching
1	Chemical interdiffusion
1	Continuous wave lasers
1	Conversion rate
1	Crystal microstructure
1	Crystal morphology
1	Crystal orientation
1	Decomposition
1	Density
1	Deposition process
1	Electrical pumping
1	Electron mobility
1	Electron state
1	Electron-hole recombination
1	Electronic density of states
1	Electronic structure
1	Elemental semiconductors
1	Energy characteristic
1	Energy gap
1	Energy level
1	Entropy
1	Epitaxial growth
1	Etching
1	Fourier transformation
1	Free energy

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