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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. Y. Polyakov »
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A. Y. Nashelskii < A. Y. Polyakov < A. Y. Shik  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000482 (2004) Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000756 (2002-04-15) Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
000787 (2002) Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy
000800 (2002) Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
000819 (2002) Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions
001221 (1996) The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
001260 (1996) Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001400 (1994-12-01) Hydrogen passivation effects in InGaAlP and InGaP
001470 (1994) The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
001548 (1993) Mechanism of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb
001873 (1990) The effect of hydrogen on bulk and surface traps in indium antimonide
001952 (1989) The charge state of hydrogen and hydrogen diffusion in InP and InGaAs
001970 (1989) Hydrogen passivation of donors and acceptors in InP
001979 (1989) Charge state and hydrogen levels position in different III-V materials

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
7Hydrogen
7III-V compound
6Photoluminescence
6Semiconductor materials
4Indium Phosphides
4Inorganic compound
4Passivation
4Quaternary compound
4Voltage current curve
3Aluminium phosphides
3CV characteristic
3Donor center
3Experiments
3Gallium phosphides
3Indium phosphides
3Quaternary compounds
3Semiconducting indium gallium arsenide
3Voltage capacity curve
2Aluminium Phosphides
2Barrier height
2Cathodoluminescence
2DLTS
2Deep level transient spectroscopy
2Doping
2Electrical properties
2Electron traps
2Film growth
2Gallium Antimonides
2Gallium Indium Arsenides Mixed
2Gallium Phosphides
2Heterojunction
2Heterojunctions
2III-V semiconductors
2IV characteristic
2Indium Antimonides
2Light emitting diodes
2MIS structure
2Manufacturing process
2Microelectronic fabrication
2Schottky barrier diode
2Semiconducting films
2Semiconductor quantum wells
2Temperature dependence
2Ternary compound
2Ternary compounds
2Thin films
1Acceptor center
1Activation energy
1Aluminium Arsenides
1Aluminium Gallium Antimonides arsenides Mixed
1Annealing
1Annealing temperature
1Anodic oxide
1Band offset
1Binary compound
1CVD
1Capacitance
1Carrier concentration
1Carrier density
1Charge carrier concentration
1Complex defect
1Composition
1Composition effect
1Conduction band
1Conductivity
1Contamination
1Cross section
1Crossed beams
1Current voltage characteristics
1Defects
1Diffusion
1Diodes
1Dose rate
1Electric breakdown of solids
1Electric resistivity
1Electric space charge
1Electrical characteristic
1Electrical conductivity
1Electroluminescence
1Electronic properties
1Energy band
1Energy levels
1Epitaxial film
1Epitaxial films
1Epitaxy
1External fields
1Fermi level
1Frequency characteristic
1Gadolinium additions
1Gallium Indium Antimonides arsenides Mixed
1Gallium Indium Arsenides phosphides Mixed
1Gallium antimonides
1Gallium arsenides
1Gallium compounds
1Gallium nitrides
1Growth from solution
1Implantation
1Impurity level
1Impurity states

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