List of bibliographic references
Number of relevant bibliographic references: 50.
| Ident. | Authors (with country if any) | Title |
|---|
| 000031 (2012) |
| Structure of ordered oxide on InAs(100) surface |
| 000039 (2012) |
| Optical characterization of individual quantum dots |
| 000055 (2011) |
| Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations |
| 000167 (2009) |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 000169 (2009) |
| Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots |
| 000193 (2008) |
| Optical absorption of polarized light in InAs/GaSb quantum wells |
| 000205 (2008) |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000230 (2007) |
| Recent developments in the III-nitride materials |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000357 (2005) |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000358 (2005) |
| Optical properties of InN related to surface plasmons |
| 000379 (2005) |
| Effects of separate carrier generation on the emission properties of InAs/ GaAs quantum dots |
| 000396 (2004-06-14) |
| The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots |
| 000415 (2004-03-19) |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000416 (2004-03-15) |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 000429 (2004-01-15) |
| Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties |
| 000438 (2004) |
| Weak antilocalization in quantum wells in tilted magnetic fields |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000460 (2004) |
| New peculiarities of interband tunneling in broken-gap heterostructures |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000472 (2004) |
| InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications |
| 000478 (2004) |
| Electronic structures and transport properties of broken-gap heterostructures |
| 000479 (2004) |
| Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells |
| 000482 (2004) |
| Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
| 000492 (2004) |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000494 (2004) |
| A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields |
| 000512 (2003-10-15) |
| Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot |
| 000679 (2003) |
| Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation |
| 000700 (2002-12-15) |
| Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs |
| 000707 (2002-11-15) |
| Acceptor-induced threshold energy for the optical charging of InAs single quantum dots |
| 000712 (2002-11) |
| Correlation spectroscopy of excitons and biexcitons on a single quantum dot |
| 000725 (2002-08-15) |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 000808 (2002) |
| New anion-deficient cubic perovskites: Ba2In1-xCo1+xO5+δ (0 ≤ x ≤ 0.8) and Ba2-xLaxCoInO5+δ (0.2 ≤ x ≤ 0.8) |
| 000821 (2002) |
| Influence of band state mixing on interband magnetotunnelling in broken-gap heterostructures |
| 000859 (2001-12-15) |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 000967 (2001) |
| Novel compounds Sn10In14P22I8 and Sn14In10P21.2I8 with clathrate I structure: Synthesis and crystal and electronic structure |
| 000A69 (2000-06-15) |
| Optical transitions in broken gap heterostructures |
| 000B39 (2000) |
| Studying element vaporization and atomization processes in electrothermal atomizers by laser-excited atomic fluorescence spectrometry : Indium, matrix effects |
| 000B84 (2000) |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
| 000C03 (2000) |
| Cellular processing of 125I- and 111In-labeled epidermal growth factor (EGF) bound to cultured A431 tumor cells |
| 000C17 (1999-12-06) |
| Polaron Effects in Quantum Dots |
| 000C53 (1999-09) |
| Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning |
| 000D39 (1999-01) |
| Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions |
| 000D63 (1999) |
| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
| 001120 (1997) |
| Electronic g factor in biased quantum wells |
| 001231 (1996) |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
| 001290 (1995-09-01) |
| Picosecond pulse shaping using dynamic carrier heating in a gain-switched semiconductor laser |
| 001310 (1995-06-15) |
| Interaction of above-Fermi-edge magnetoexciton states from different subbands in dense two-dimensional electron magnetoplasma |
| 001399 (1994-12-15) |
| Renormalization effects in the dense neutral magnetoplasma of quantum wells with two filled subbands |
| 001426 (1994-07-25) |
| Fine structure in the photoluminescence line of a quasi-2D electron Landau level: Initial or final state origin? |
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