Université de Manchester < Université de Nottingham < Université de Princeton

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List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]

Ident.	Authors (with country if any)	Title
000480 (2004)		Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well
000511 (2003-10-15)		Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband
000605 (2003)		Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunnelling
000632 (2003)		Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T
000648 (2003)		Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures
000674 (2003)		Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots
000680 (2003)		Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer
000753 (2002-04-15)		Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy
000766 (2002-02-15)		Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots
000951 (2001)		Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling
000975 (2001)		Magneto-tunnelling spectroscopy for spatial mapping of orbital wavefunctions of the ground and excited electronic states in self-assembled quantum dots
000A67 (2000-06-26)		Stark shift in electroluminescence of individual InAs quantum dots
000C94 (1999-05)		Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots
000D95 (1999)		Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots
000E35 (1998-10)		Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
000E48 (1998-08-24)		Electronic structure of self-assembled InAs quantum dots in GaAs matrix
000E50 (1998-08-15)		Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover
000E63 (1998-06-10)		Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots
000F46 (1998)		Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
001187 (1996-05)		Molecular beam epitaxy growth kinetics for group III nitrides
001309 (1995-07)		Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates

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