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Serveur d'exploration sur l'Indium

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Le cluster Gallium Indium Arsenides phosphides Mixed - Semiconductor laser

Terms

43Gallium Indium Arsenides phosphides Mixed
24Semiconductor laser
107Heterojunction
66Voltage current curve
63Epitaxy
24Growth from liquid
87Thin film
66Crystal growth

Associations

Freq.WeightAssociation
170.529Gallium Indium Arsenides phosphides Mixed - Semiconductor laser
180.265Gallium Indium Arsenides phosphides Mixed - Heterojunction
200.238Heterojunction - Voltage current curve
160.411Epitaxy - Growth from liquid
270.365Epitaxy - Thin film
160.350Growth from liquid - Thin film
190.295Crystal growth - Epitaxy
220.290Crystal growth - Thin film
160.195Epitaxy - Heterojunction
170.176Heterojunction - Thin film
Documents par ordre de pertinence
001690 (1992) Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers
001B87 (1987) Peculiarities of liquid phase epitaxy in GaInPAs/InP lattice-matched heterostructures
001C20 (1987)
000B83 (2000) High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films
001878 (1990) Structural quality of InAs1-x-ySbxPy-InAs double heterostructures
001947 (1989) The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE
001B22 (1988)
001E57 (1984)
001E95 (1984)
001614 (1992) Stability analysis of quaternary InxGa1-xSbyAs1-y alloys
001804 (1991) In0.53Ga0.47As/In0.88Ga0.12As0.23P0.77 heterostructres with a two-dimensional electron gas
001A26 (1989)
001C24 (1987)
001C95 (1986) The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs
001D30 (1986)
001D65 (1986)
001E26 (1985)
001E72 (1984)
001375 (1995) Injection-contact phenomena in sub-micron layers of disordered zinc selenide
001638 (1992) Phase interaction and heteroepitaxy in the InPAsSb system
001676 (1992) High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
001703 (1992) Current transport processes in an In2O3-ZnSe-In heterostructure with a submicron zinc selenide layer
001791 (1991) Intermode interactions in a heterolaser working at the second-order difference frequency
001809 (1991) HREM of epitaxial layers in the InAs/GaAs system
001860 (1990) X-ray diffraction investigation of elastic and plastic deformations in heterostructures with large lattice-period misfits, of the types ZnSexS1-x/GaAs and InP/GaAs
001885 (1990) Residual deformation in epitaxial layers of InGaAsSb, InAsSbP, and InAsSb on an InAs substrate
001A15 (1989)
001A16 (1989)
001A21 (1989)
001A28 (1989)
001B31 (1988)
001B33 (1988)
001B51 (1988)
001C31 (1987)
001C76 (1987)
001C80 (1987)
001D51 (1986)
001E69 (1984)
001E70 (1984)
001E77 (1984)
001E88 (1984)
000117 (2010) Fluorine doped indium oxide films for silicon solar cells
000126 (2010) Band structure at heterojunction interfaces of GaInP solar cells
000247 (2007) ITO deposited by pyrosol for photovoltaic applications
000451 (2004) Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
001131 (1997) Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001516 (1993) Standard-free electron-probe microanalysis of submicron films of HTSC oxides and semiconductors
001518 (1993) Semiclassical theory of interband tunnelling in semiconductor heterostructures
001529 (1993) Potosensitivity of n-Cd0.8Zn0.2S-p-CulnSe2 heterojunctions
001536 (1993) Photoelectric properties of n-CdS:In-p-CuInSe2 heterojunctions
001561 (1993) Inversion of the conduction in a zinc-selenide layer of an In2O3-ZnSE-(Zn1-xCdxTe)1-y(In2Te3)y-In heterostructure
001566 (1993) High-power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes
001634 (1992) Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour deposition
001641 (1992) Optical-contact heterojunctions formed from CuInSe2 films
001647 (1992) Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001668 (1992) Injection-contact phenomena in a heterostructure made of disordered zinc selenide
001711 (1992) Application of the liquid-metal ion source in thin film deposition
001731 (1991) The preparation and properties of In2S3 films
001805 (1991) Improvement in the burial process and fabrication of single-mode buried InGaAsP/InP (λ = 1.3 μm) lasers with an output power of 160 mW
001807 (1991) High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers
001812 (1991) Formation of oxide layers on InP in the presence of BiCl3
001816 (1991) Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
001888 (1990) Raman scattering of light by a photoinduced plasma in double heterostructures
001919 (1990) Growth, structure and properties of thin monocrystalline InSb films grown by recrystallization in a narrow gap
001957 (1989) Photoelectrical properties of CuInSe2-GaAs heterojunctions
001961 (1989) Molecular beam epitaxy of semiconductor films and modulated structures
001970 (1989) Hydrogen passivation of donors and acceptors in InP
001971 (1989) High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers
001986 (1989)
001A11 (1989)
001A29 (1989)
001A30 (1989)
001A50 (1988) Waveguiding and temperature characteristics of threshold current and amplitude-phase coupling coefficient in double-heterostructure lasers
001A70 (1988) Heterostructures on the basis of indium arsenide with semi-insulating A2IIIB3VI compound layers
001B00 (1988)
001B07 (1988)
001B15 (1988)
001B20 (1988)
001C19 (1987)
001C40 (1987)
001C51 (1987)
001C52 (1987)
001C71 (1987)
001C72 (1987)
001C77 (1987)
001C81 (1987)
001D16 (1986) Electrophysical properties of In2Te2-InAs heterojunctions
001D27 (1986)
001D66 (1986)
001D82 (1985)
001E18 (1985)
001E36 (1984) Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 AT 300 K)
001E93 (1984)
000042 (2012) Indolinone-substituted methanofullerene-A new acceptor for organic solar cells
000057 (2011) The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
000092 (2010) Thin film removal mechanisms in ns-laser processing of photovoltaic materials
000099 (2010) Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
Wicri

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