Le cluster Gallium arsenides - Indium arsenides
| 000340 (2005) | Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1-xAs matrices | |
| 000475 (2004) | Growth and optical properties of InAs/GaAs quantum dot structures | |
| 000642 (2003) | Investigation of the formation of InAs QD's in a AlGaAs matrix | |
| 000964 (2001) | Optical and structural properties of self-organized InGaAsN/GaAs nanostructures | |
| 000C13 (2000) | "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation | |
| 000D80 (1999) | Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots | |
| 000030 (2012) | Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures | |
| 000232 (2007) | Quantum-dot superluminescent diodes with improved performance | |
| 000284 (2006) | Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects : evidence for lateral inter-dot transport | |
| 000326 (2006) | Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots | |
| 000347 (2005) | Quantum dot VCSELs | |
| 000351 (2005) | Polarization spectroscopy of positive and negative trions in an InAs quantum dot | |
| 000355 (2005) | Optical spin polarization in double charged InAs self-assembled quantum dots | |
| 000622 (2003) | Optical spin polarization in negatively charged InAs self-assembled quantum dots under applied electric field | |
| 000663 (2003) | Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences | |
| 000681 (2003) | Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma | |
| 000933 (2001) | The influence of Coulomb effects on the electron emission and capture in InGaAs/GaAs self-assembled quantum dots | |
| 000946 (2001) | Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots | |
| 000962 (2001) | Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells | |
| 000969 (2001) | Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures | |
| 000980 (2001) | Large spectral splitting of TE and TM components of QDs in a microcavity | |
| 000985 (2001) | InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range | |
| 000A04 (2001) | Dynamical redistribution of mean electron spin over the energy spectrum of quantum dots | |
| 000A10 (2001) | Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence | |
| 000B80 (2000) | InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers | |
| 000C11 (2000) | 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition | |
| 000D94 (1999) | Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots | |
| 000F31 (1998) | Optical properties of InAlAs quantum dots in an AlGaAs matrix | |
| 001085 (1997) | Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques | |
| 001114 (1997) | InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition | |
| 001116 (1997) | Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition | |
| 000266 (2007) | Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection | |
| 000277 (2006) | Two-frequency coupled-cavity vertical-cavity surface-emitting lasers | |
| 000286 (2006) | Spin relaxation of positive trions in InAs/GaAs quantum dots : the role of hyperfine interaction | |
| 000315 (2006) | Influence of matrix defects on the photoluminescence of InAs self-assembled quantum dots | |
| 000331 (2006) | 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance | |
| 000356 (2005) | Optical spin polarization and exchange interaction in doubly charged InAs self-assembled quantum dots | |
| 000377 (2005) | Epitaxial growth of quantum-dot heterostructures on metamorphic buffers | |
| 000443 (2004) | The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing | |
| 000447 (2004) | Strong coupling in a single quantum dot-semiconductor microcavity system | |
| 000453 (2004) | Quantum beats in semiconductor quantum dots | |
| 000470 (2004) | Interface phonons in InAs and AlAs quantum dot structures | |
| 000484 (2004) | Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons | |
| 000593 (2003) | Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures | |
| 000595 (2003) | The influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaAs quantum dots | |
| 000600 (2003) | Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy | |
| 000603 (2003) | Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots | |
| 000623 (2003) | Optical spin orientation under inter- and intra-subband transitions in QWs | |
| 000632 (2003) | Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T | |
| 000640 (2003) | Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells | |
| 000648 (2003) | Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures | |
| 000654 (2003) | InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain | |
| 000662 (2003) | High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells | |
| 000665 (2003) | Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots | |
| 000680 (2003) | Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer | |
| 000794 (2002) | Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure | |
| 000802 (2002) | Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation | |
| 000816 (2002) | Long-wavelength quantum-dot lasers | |
| 000820 (2002) | Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes | |
| 000827 (2002) | High-power single-transverse-mode ridge optical waveguide semiconductor lasers | |
| 000828 (2002) | High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures | |
| 000833 (2002) | Electron spin redistribution due to Pauli blocking in quantum dots and quantum wells | |
| 000943 (2001) | Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs | |
| 000945 (2001) | Reversibility of the island shape, volume and density in Stranski-Krastanow growth | |
| 000951 (2001) | Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling | |
| 000956 (2001) | Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates | |
| 000987 (2001) | Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots | |
| 000991 (2001) | Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation | |
| 000996 (2001) | Entropy-driven effects in self-organized formation of quantum dots | |
| 000A12 (2001) | Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses | |
| 000A19 (2001) | 1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis : Special issue papers | |
| 000B32 (2000) | Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode | |
| 000B58 (2000) | Optical gain in InAs/InGaAs quantum-dot structures : Experiments and theoretical model | |
| 000B87 (2000) | Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers | |
| 000B90 (2000) | Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers | |
| 000B91 (2000) | Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure | |
| 000B93 (2000) | Electron drift velocity of the two-dimensional electron gas in compound semiconductors | |
| 000D61 (1999) | Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction | |
| 000D67 (1999) | Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots | |
| 000D73 (1999) | Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers | |
| 000E01 (1999) | Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots | |
| 000E06 (1999) | Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status | |
| 000E18 (1999) | 1.75 μm emission from self-organized InAs quantum dots on GaAs | |
| 000F40 (1998) | Kinetics of dark excitons and excitonic trions in InGaAs single quantum well | |
| 000F63 (1998) | Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures | |
| 001068 (1997) | Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency | |
| 001092 (1997) | Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots | |
| 001095 (1997) | Radiation characteristics of injection lasers based on vertically coupled quantum dots | |
| 001102 (1997) | Negative characteristic temperature of InGaAs quantum dot injection laser | |
| 001110 (1997) | Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers | |
| 001120 (1997) | Electronic g factor in biased quantum wells | |
| 001123 (1997) | Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers | |
| 001250 (1996) | Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures | |
| 001354 (1995) | Reactive ion etched quantum wire structures for laser applications | |
| 001371 (1995) | Linear polarization of photoluminescence and Raman scattering in open InGaAs/InP quantum well wires | |
| 001376 (1995) | High resolution electron microscopy of semiconductor interfaces | |
| 001379 (1995) | Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy | |
| 001685 (1992) | Excitonic effects in neutral electron-hole magnetoplasma in quantum wells at low temperatures | |
| 000047 (2012) | Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier | |
| 000048 (2012) | Effects of p-type doping on the optical properties of InAs/GaAs quantum dots |
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