Nature of optical transitions in self-organized InAs/GaAs quantum dots
Identifieur interne : 001195 ( Russie/Analysis ); précédent : 001194; suivant : 001196Nature of optical transitions in self-organized InAs/GaAs quantum dots
Auteurs : RBID : Pascal:97-0096057Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Electronic transitions in nm-scale pyramid-shaped InAs/GaAs quantum dots feature only ground-state electrons. Allowed optical transitions involving excited hole states in addition to the ground-state transition are revealed in absorption and photoluminescence spectra. The experimental data agree with detailed theoretical calculations of the electronic structure, including strain, piezoelectric, and excitonic effects, and lead to unambiguous assignment of the transitions. We find as upper bound for the relative standard deviation of the size fluctuation ξ≤0.04. The hole sublevel separation is consistent with a pyramid shape fluctuation between {101} and {203} side facets. © 1996 The American Physical Society.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 018E66
- to stream Main, to step Repository: 019E03
- to stream Russie, to step Extraction: 001195
Links to Exploration step
Pascal:97-0096057Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Nature of optical transitions in self-organized InAs/GaAs quantum dots</title>
<author><name sortKey="Grundmann, M" uniqKey="Grundmann M">M. Grundmann</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin</wicri:regionArea>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin</wicri:regionArea>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Stier, O" uniqKey="Stier O">O. Stier</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin</wicri:regionArea>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bohrer, J" uniqKey="Bohrer J">J. Bohrer</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin</wicri:regionArea>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bimberg, D" uniqKey="Bimberg D">D. Bimberg</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin</wicri:regionArea>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg, Russia</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg</wicri:regionArea>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kop Ev, P S" uniqKey="Kop Ev P">P. S. Kop Ev</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg, Russia</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg</wicri:regionArea>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Alferov, Z I" uniqKey="Alferov Z">Z. I. Alferov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg, Russia</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg</wicri:regionArea>
<wicri:noRegion>St. Petersburg</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">97-0096057</idno>
<date when="1996-04-15">1996-04-15</date>
<idno type="stanalyst">PASCAL 97-0096057 AIP</idno>
<idno type="RBID">Pascal:97-0096057</idno>
<idno type="wicri:Area/Main/Corpus">018E66</idno>
<idno type="wicri:Area/Main/Repository">019E03</idno>
<idno type="wicri:Area/Russie/Extraction">001195</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0163-1829</idno>
<title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title>
<title level="j" type="main">Physical review. B, Condensed matter</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7320D</term>
<term>7866F</term>
<term>7855</term>
<term>Etude expérimentale</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Electronic transitions in nm-scale pyramid-shaped InAs/GaAs quantum dots feature only ground-state electrons. Allowed optical transitions involving excited hole states in addition to the ground-state transition are revealed in absorption and photoluminescence spectra. The experimental data agree with detailed theoretical calculations of the electronic structure, including strain, piezoelectric, and excitonic effects, and lead to unambiguous assignment of the transitions. We find as upper bound for the relative standard deviation of the size fluctuation ξ≤0.04. The hole sublevel separation is consistent with a pyramid shape fluctuation between {101} and {203} side facets. © 1996 The American Physical Society.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0>
</fA01>
<fA02 i1="01"><s0>PRBMDO</s0>
</fA02>
<fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0>
</fA03>
<fA05><s2>53</s2>
</fA05>
<fA06><s2>16</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Nature of optical transitions in self-organized InAs/GaAs quantum dots</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GRUNDMANN (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LEDENTSOV (N. N.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>STIER (O.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>BOHRER (J.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BIMBERG (D.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>USTINOV (V. M.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>KOP'EV (P. S.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>ALFEROV (Z. I.)</s1>
</fA11>
<fA14 i1="01"><s1>Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>A. F. Ioffe Physical-Technical Institute, 194021, Politeckhnicheskaya 26, St. Petersburg, Russia</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA20><s2>R10509-R10511</s2>
</fA20>
<fA21><s1>1996-04-15</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>144 B</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 1997 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>97-0096057</s0>
</fA47>
<fA60><s1>P</s1>
<s3>CR</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Electronic transitions in nm-scale pyramid-shaped InAs/GaAs quantum dots feature only ground-state electrons. Allowed optical transitions involving excited hole states in addition to the ground-state transition are revealed in absorption and photoluminescence spectra. The experimental data agree with detailed theoretical calculations of the electronic structure, including strain, piezoelectric, and excitonic effects, and lead to unambiguous assignment of the transitions. We find as upper bound for the relative standard deviation of the size fluctuation ξ≤0.04. The hole sublevel separation is consistent with a pyramid shape fluctuation between {101} and {203} side facets. © 1996 The American Physical Society.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C20D</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H55</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7320D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7855</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Point quantique</s0>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Quantum dots</s0>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC07>
<fC07 i1="03" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
</fC07>
<fC07 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
</fC07>
<fC07 i1="04" i2="3" l="FRE"><s0>Propriété optique</s0>
</fC07>
<fC07 i1="04" i2="3" l="ENG"><s0>Optical properties</s0>
</fC07>
<fC07 i1="05" i2="3" l="FRE"><s0>Transition niveau énergie</s0>
</fC07>
<fC07 i1="05" i2="3" l="ENG"><s0>Energy-level transitions</s0>
</fC07>
<fC07 i1="06" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC07>
<fC07 i1="06" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC07>
<fC07 i1="07" i2="3" l="FRE"><s0>Spectre absorption</s0>
</fC07>
<fC07 i1="07" i2="3" l="ENG"><s0>Absorption spectra</s0>
</fC07>
<fC07 i1="08" i2="3" l="FRE"><s0>Déformation mécanique</s0>
</fC07>
<fC07 i1="08" i2="3" l="ENG"><s0>Strains</s0>
</fC07>
<fC07 i1="09" i2="3" l="FRE"><s0>Piézoélectricité</s0>
</fC07>
<fC07 i1="09" i2="3" l="ENG"><s0>Piezoelectricity</s0>
</fC07>
<fN21><s1>229</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>9709M01095</s0>
</fN47>
</pA>
</standard>
</inist>
</record>
Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001195 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 001195 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien |wiki= *** parameter Area/wikiCode missing *** |area= IndiumV3 |flux= Russie |étape= Analysis |type= RBID |clé= Pascal:97-0096057 |texte= Nature of optical transitions in self-organized InAs/GaAs quantum dots }}
This area was generated with Dilib version V0.5.77. |