IndiumV3, Russie, Analysis, bibRecord, 001130

Coadsorption of Ag and In atoms on Si(111) surface

Identifieur interne : 001130 ( Russie/Analysis ); précédent : 001129; suivant : 001131

Coadsorption of Ag and In atoms on Si(111) surface

Auteurs : RBID : Pascal:97-0458209

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Coadsorption, Adsorption gaz solide, Interface gaz solide, LEED, Spectrométrie Auger, Structure surface, Recuit, Argent, Indium, Silicium, Matériau semiconducteur, 6845, Ag, In, Si.
Wicri :
- concept : Argent.

English descriptors

KwdEn :
- AES, Annealing, Coadsorption, Experimental study, Gas solid adsorption, Gas solid interface, Indium, LEED, Semiconductor materials, Silicon, Silver, Surface structure.

Abstract

The coadsorption of Ag and In on the Si(lll) surface has been studied by means of low energy electron diffraction and Auger electron spectroscopy. It was found that at room temperature (RT) the mechanism of filling of the substrate surface by the adsorbed atoms differs depending on the evaporation sequence of elements. The formation of ordered structures has not been detected. Upon RT deposition of In atoms on the pre-formed Si(111)√-Ag and Si(111)3 x I-Ag phases, In atoms displace Ag atoms and form the disordered Si(111)1xlR30°-In phase. At RT deposition of Ag atoms onto pre-formed Si(ill)fl-In, Si(lll)√/31-In and Si(lll)4 1-In phases new (3 x IF, (√3 x √)- and (√7 x √7)R19.1° structures are assumed to be formed, respectively, as a result of ordered Ag adsorption. The diagram of surface structures formed as a function of annealing was obtained for the Si(lll)-jAg,in) system.

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Pascal:97-0458209

Le document en format XML

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<author><name sortKey="Gavriljuk, Y L" uniqKey="Gavriljuk Y">Y. L. Gavriljuk</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Automation and Control Processes, Russian Academy of Sciences, 5 Radio Street</s1>
<s2>Vladivostok 690041</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>Vladivostok 690041</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lifshits, V G" uniqKey="Lifshits V">V. G. Lifshits</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Automation and Control Processes, Russian Academy of Sciences, 5 Radio Street</s1>
<s2>Vladivostok 690041</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Vladivostok 690041</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bekhtereva, O V" uniqKey="Bekhtereva O">O. V. Bekhtereva</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Automation and Control Processes, Russian Academy of Sciences, 5 Radio Street</s1>
<s2>Vladivostok 690041</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Vladivostok 690041</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Azatyan, S G" uniqKey="Azatyan S">S. G. Azatyan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Automation and Control Processes, Russian Academy of Sciences, 5 Radio Street</s1>
<s2>Vladivostok 690041</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>Vladivostok 690041</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Enebish, N" uniqKey="Enebish N">N. Enebish</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Technology of the Mongolian Academy of Sciences, Ulaanbaatar-51</s1>
<s3>MNG</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Mongolie</country>
<wicri:noRegion>University of Technology of the Mongolian Academy of Sciences, Ulaanbaatar-51</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">97-0458209</idno>
<date when="1997">1997</date>
<idno type="stanalyst">PASCAL 97-0458209 INIST</idno>
<idno type="RBID">Pascal:97-0458209</idno>
<idno type="wicri:Area/Main/Corpus">019457</idno>
<idno type="wicri:Area/Main/Repository">019322</idno>
<idno type="wicri:Area/Russie/Extraction">001130</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0039-6028</idno>
<title level="j" type="abbreviated">Surf. sci.</title>
<title level="j" type="main">Surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>AES</term>
<term>Annealing</term>
<term>Coadsorption</term>
<term>Experimental study</term>
<term>Gas solid adsorption</term>
<term>Gas solid interface</term>
<term>Indium</term>
<term>LEED</term>
<term>Semiconductor materials</term>
<term>Silicon</term>
<term>Silver</term>
<term>Surface structure</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Coadsorption</term>
<term>Adsorption gaz solide</term>
<term>Interface gaz solide</term>
<term>LEED</term>
<term>Spectrométrie Auger</term>
<term>Structure surface</term>
<term>Recuit</term>
<term>Argent</term>
<term>Indium</term>
<term>Silicium</term>
<term>Matériau semiconducteur</term>
<term>6845</term>
<term>Ag</term>
<term>In</term>
<term>Si</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Argent</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The coadsorption of Ag and In on the Si(lll) surface has been studied by means of low energy electron diffraction and Auger electron spectroscopy. It was found that at room temperature (RT) the mechanism of filling of the substrate surface by the adsorbed atoms differs depending on the evaporation sequence of elements. The formation of ordered structures has not been detected. Upon RT deposition of In atoms on the pre-formed Si(111)√-Ag and Si(111)3 x I-Ag phases, In atoms displace Ag atoms and form the disordered Si(111)1xlR30°-In phase. At RT deposition of Ag atoms onto pre-formed Si(ill)fl-In, Si(lll)√/31-In and Si(lll)4 1-In phases new (3 x IF, (√3 x √)- and (√7 x √7)R19.1° structures are assumed to be formed, respectively, as a result of ordered Ag adsorption. The diagram of surface structures formed as a function of annealing was obtained for the Si(lll)-jAg,in) system.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0>
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</fA02>
<fA03 i2="1"><s0>Surf. sci.</s0>
</fA03>
<fA05><s2>373</s2>
</fA05>
<fA06><s2>2-3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Coadsorption of Ag and In atoms on Si(111) surface</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GAVRILJUK (Y. L.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LIFSHITS (V. G.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BEKHTEREVA (O. V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>AZATYAN (S. G.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ENEBISH (N.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Automation and Control Processes, Russian Academy of Sciences, 5 Radio Street</s1>
<s2>Vladivostok 690041</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>University of Technology of the Mongolian Academy of Sciences, Ulaanbaatar-51</s1>
<s3>MNG</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>173-180</s1>
</fA20>
<fA21><s1>1997</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>12426</s2>
<s5>354000068970610040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 1997 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>97-0458209</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The coadsorption of Ag and In on the Si(lll) surface has been studied by means of low energy electron diffraction and Auger electron spectroscopy. It was found that at room temperature (RT) the mechanism of filling of the substrate surface by the adsorbed atoms differs depending on the evaporation sequence of elements. The formation of ordered structures has not been detected. Upon RT deposition of In atoms on the pre-formed Si(111)√-Ag and Si(111)3 x I-Ag phases, In atoms displace Ag atoms and form the disordered Si(111)1xlR30°-In phase. At RT deposition of Ag atoms onto pre-formed Si(ill)fl-In, Si(lll)√/31-In and Si(lll)4 1-In phases new (3 x IF, (√3 x √)- and (√7 x √7)R19.1° structures are assumed to be formed, respectively, as a result of ordered Ag adsorption. The diagram of surface structures formed as a function of annealing was obtained for the Si(lll)-jAg,in) system.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H45</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Coadsorption</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Coadsorption</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="GER"><s0>Koadsorption</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Coadsorción</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Adsorption gaz solide</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Gas solid adsorption</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Adsorción gas sólido</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Interface gaz solide</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Gas solid interface</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="GER"><s0>Grenzschicht gasfoermig fest</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Interfase gas sólido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>LEED</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>LEED</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Spectrométrie Auger</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>AES</s0>
<s5>06</s5>
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<s5>07</s5>
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<fC03 i1="07" i2="3" l="ENG"><s0>Surface structure</s0>
<s5>07</s5>
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<s5>08</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Annealing</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Argent</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Silver</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>6845</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Ag</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>In</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Si</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Métal transition</s0>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Transition elements</s0>
<s5>16</s5>
</fC07>
<fN21><s1>279</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Coadsorption of Ag and In atoms on Si(111) surface

Coadsorption of Ag and In atoms on Si(111) surface

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri