IndiumV3, Russie, Analysis, bibRecord, 000A73

Thermoelectric and Photoelectric Properties of the p-n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method

Identifieur interne : 000A73 ( Russie/Analysis ); précédent : 000A72; suivant : 000A74

Thermoelectric and Photoelectric Properties of the p-n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method

Auteurs : RBID : Pascal:00-0229734

Descripteurs français

Pascal (Inist)
- 7350L, 7350P, 7340L, Etude expérimentale, Cadmium composé, Soufre composé, Cuivre composé, Indium composé, Sélénium composé, Hétérojonction semiconducteur, Pouvoir thermoélectrique, Effet photovoltaïque, Couche mince semiconductrice, Conductivité électrique.

English descriptors

KwdEn :
- Cadmium compounds, Copper compounds, Electrical conductivity, Experimental study, Indium compounds, Photovoltaic effects, Selenium compounds, Semiconductor heterojunctions, Semiconductor thin films, Sulfur compounds, Thermoelectric power.

Abstract

Through deposition of CuInSe₂ films on CdS substrates in a quasi-closed-circuit hot-wall reactor, p-n CuInSe₂/CdS heterostructures were obtained. The thermoelectric power, current-voltage characteristics, and photosensitivity spectra of the structures were investigated. © 2000 MAIK Nauka / Interperiodica .

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermoelectric and Photoelectric Properties of the p-n CuInSe<sub>2</sub>
/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method</title>
<author><name sortKey="Magomedov, M R A" uniqKey="Magomedov M">M.-R. A. Magomedov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan</wicri:regionArea>
<wicri:noRegion>367003 Dagestan</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ismailov, Sh M" uniqKey="Ismailov S">Sh. M. Ismailov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan</wicri:regionArea>
<wicri:noRegion>367003 Dagestan</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Magomedova, Dzh Kh" uniqKey="Magomedova D">Dzh. Kh. Magomedova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan</wicri:regionArea>
<wicri:noRegion>367003 Dagestan</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Khokhlachev, P P" uniqKey="Khokhlachev P">P. P. Khokhlachev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan</wicri:regionArea>
<wicri:noRegion>367003 Dagestan</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">00-0229734</idno>
<date when="2000-06">2000-06</date>
<idno type="stanalyst">PASCAL 00-0229734 AIP</idno>
<idno type="RBID">Pascal:00-0229734</idno>
<idno type="wicri:Area/Main/Corpus">013211</idno>
<idno type="wicri:Area/Main/Repository">011F69</idno>
<idno type="wicri:Area/Russie/Extraction">000A73</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1063-7826</idno>
<title level="j" type="abbreviated">Semiconductors</title>
<title level="j" type="main">Semiconductors</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term>
<term>Copper compounds</term>
<term>Electrical conductivity</term>
<term>Experimental study</term>
<term>Indium compounds</term>
<term>Photovoltaic effects</term>
<term>Selenium compounds</term>
<term>Semiconductor heterojunctions</term>
<term>Semiconductor thin films</term>
<term>Sulfur compounds</term>
<term>Thermoelectric power</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7350L</term>
<term>7350P</term>
<term>7340L</term>
<term>Etude expérimentale</term>
<term>Cadmium composé</term>
<term>Soufre composé</term>
<term>Cuivre composé</term>
<term>Indium composé</term>
<term>Sélénium composé</term>
<term>Hétérojonction semiconducteur</term>
<term>Pouvoir thermoélectrique</term>
<term>Effet photovoltaïque</term>
<term>Couche mince semiconductrice</term>
<term>Conductivité électrique</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Through deposition of CuInSe<sub>2</sub>
 films on CdS substrates in a quasi-closed-circuit  hot-wall  reactor, p-n CuInSe<sub>2</sub>
/CdS heterostructures were obtained. The thermoelectric power, current-voltage characteristics, and photosensitivity spectra of the structures were investigated. © 2000 MAIK  Nauka / Interperiodica .</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0>
</fA01>
<fA02 i1="01"><s0>SMICES</s0>
</fA02>
<fA03 i2="1"><s0>Semiconductors</s0>
</fA03>
<fA05><s2>34</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Thermoelectric and Photoelectric Properties of the p-n CuInSe<sub>2</sub>
/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MAGOMEDOV (M.-R. A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>ISMAILOV (Sh. M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MAGOMEDOVA (Dzh. Kh.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KHOKHLACHEV (P. P.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003 Dagestan, Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA20><s1>662-664</s1>
</fA20>
<fA21><s1>2000-06</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>12492</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2000 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>00-0229734</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductors</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Through deposition of CuInSe<sub>2</sub>
 films on CdS substrates in a quasi-closed-circuit  hot-wall  reactor, p-n CuInSe<sub>2</sub>
/CdS heterostructures were obtained. The thermoelectric power, current-voltage characteristics, and photosensitivity spectra of the structures were investigated. © 2000 MAIK  Nauka / Interperiodica .</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C50L</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C50P</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C40L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7350L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7350P</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7340L</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Cadmium composé</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Cadmium compounds</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Soufre composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Sulfur compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Cuivre composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Copper compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Sélénium composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Selenium compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Pouvoir thermoélectrique</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Thermoelectric power</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Effet photovoltaïque</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Photovoltaic effects</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Couche mince semiconductrice</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor thin films</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Conductivité électrique</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Electrical conductivity</s0>
</fC03>
<fN21><s1>157</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0022M000437</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Thermoelectric and Photoelectric Properties of the p-n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method

Thermoelectric and Photoelectric Properties of the p-n CuInSe2/CdS Heterostructures Obtained by the Quasi-Equilibrium Deposition Method

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

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Pour mettre un lien sur cette page dans le réseau Wicri