IndiumV3, Russie, Analysis, bibRecord, 000734

The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix

Identifieur interne : 000734 ( Russie/Analysis ); précédent : 000733; suivant : 000735

The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix

Auteurs : RBID : Pascal:02-0403581

Descripteurs français

Pascal (Inist)
- 8107T, 8115H, 8165M, Etude expérimentale, Point quantique, Indium composé, Arsenic composé, Aluminium composé, Oxygène composé, Relaxation contrainte, Oxydation, Spectre Raman.

English descriptors

KwdEn :
- Aluminium compounds, Arsenic compounds, Experimental study, Indium compounds, Oxidation, Oxygen compounds, Quantum dots, Raman spectra, Stress relaxation.

Abstract

The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions. © 2002 MAIK Nauka / Interperiodica .

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix</title>
<author><name sortKey="Tenne, D A" uniqKey="Tenne D">D. A. Tenne</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk</wicri:regionArea>
<wicri:noRegion>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bajutova, O R" uniqKey="Bajutova O">O. R. Bajutova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk</wicri:regionArea>
<wicri:noRegion>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bakarov, A K" uniqKey="Bakarov A">A. K. Bakarov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk</wicri:regionArea>
<wicri:noRegion>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kalagin, A K" uniqKey="Kalagin A">A. K. Kalagin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk</wicri:regionArea>
<wicri:noRegion>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Milekhin, A G" uniqKey="Milekhin A">A. G. Milekhin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk</wicri:regionArea>
<wicri:noRegion>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Toropov, A I" uniqKey="Toropov A">A. I. Toropov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk</wicri:regionArea>
<wicri:noRegion>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zahn, D R T" uniqKey="Zahn D">D. R. T. Zahn</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institut fur Physik, Universitat Chemnitz, D-09107 Chemnitz, Germany</s1>
<sZ>7 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Physik, Universitat Chemnitz, D-09107 Chemnitz</wicri:regionArea>
<wicri:noRegion>09107 Chemnitz</wicri:noRegion>
<wicri:noRegion>D-09107 Chemnitz</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0403581</idno>
<date when="2002-07">2002-07</date>
<idno type="stanalyst">PASCAL 02-0403581 AIP</idno>
<idno type="RBID">Pascal:02-0403581</idno>
<idno type="wicri:Area/Main/Corpus">00EC92</idno>
<idno type="wicri:Area/Main/Repository">00E073</idno>
<idno type="wicri:Area/Russie/Extraction">000734</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1063-7850</idno>
<title level="j" type="abbreviated">Tech. phys. lett.</title>
<title level="j" type="main">Technical physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Arsenic compounds</term>
<term>Experimental study</term>
<term>Indium compounds</term>
<term>Oxidation</term>
<term>Oxygen compounds</term>
<term>Quantum dots</term>
<term>Raman spectra</term>
<term>Stress relaxation</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8107T</term>
<term>8115H</term>
<term>8165M</term>
<term>Etude expérimentale</term>
<term>Point quantique</term>
<term>Indium composé</term>
<term>Arsenic composé</term>
<term>Aluminium composé</term>
<term>Oxygène composé</term>
<term>Relaxation contrainte</term>
<term>Oxydation</term>
<term>Spectre Raman</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions. © 2002 MAIK  Nauka / Interperiodica .</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7850</s0>
</fA01>
<fA02 i1="01"><s0>TPLEED</s0>
</fA02>
<fA03 i2="1"><s0>Tech. phys. lett.</s0>
</fA03>
<fA05><s2>28</s2>
</fA05>
<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TENNE (D. A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BAJUTOVA (O. R.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BAKAROV (A. K.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KALAGIN (A. K.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MILEKHIN (A. G.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>TOROPOV (A. I.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>ZAHN (D. R. T.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institut fur Physik, Universitat Chemnitz, D-09107 Chemnitz, Germany</s1>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s1>554-556</s1>
</fA20>
<fA21><s1>2002-07</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>20391</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2002 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>02-0403581</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Technical physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The formation of InAs quantum dots in an aluminum oxide matrix by selective oxidation of AlAs layers in an InAs/AlAs heterostructure is studied. According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions. © 2002 MAIK  Nauka / Interperiodica .</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A05Y</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A65</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>8107T</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8115H</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>8165M</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Point quantique</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Quantum dots</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Arsenic composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Arsenic compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Oxygène composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Oxygen compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Relaxation contrainte</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Stress relaxation</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Oxydation</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Oxidation</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Spectre Raman</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Raman spectra</s0>
</fC03>
<fN21><s1>224</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0230M001064</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix

The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri