IndiumV3, Russie, Analysis, bibRecord, 000542

Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements

Identifieur interne : 000542 ( Russie/Analysis ); précédent : 000541; suivant : 000543

Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements

Auteurs : RBID : Pascal:03-0256412

Descripteurs français

Pascal (Inist)
- 7960J, 6847F, 7321C, 7340G, 7321F, Etude expérimentale, Indium composé, Gallium arséniure, Aluminium composé, Emission électronique spin polarisé, Photoémission, Semiconducteur III-V, Superréseau semiconducteur, Puits quantique semiconducteur, Effet tunnel, Affinité électronique.

English descriptors

KwdEn :
- Aluminium compounds, Electron affinity, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Photoemission, Semiconductor quantum wells, Semiconductor superlattices, Spin polarized electron emission, Tunnel effect.

Abstract

High-resolution energy distribution curves and spin polarization versus energy distribution curves from an AlInGaAs layer, capped by a heavily doped thin GaAs quantum well layer has been measured. Polarization P of up to 83% in conjunction with quantum yield Y=0.5% at T=130K has been obtained. These results are compared to polarization and quantum yield spectra at high excitation power. The narrow-band quantum well is shown to provide large effective negative electron affinity values with no harm to electron polarization. The studies in linear and nonlinear excitation regimes bring insight into the kinetics of photoemission and favor the photoemission model with elastic electron tunneling through the surface barrier. © 2003 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Mamaev, Yu" uniqKey="Mamaev Y">Yu. Mamaev</name>
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<author><name sortKey="Drouhin, H J" uniqKey="Drouhin H">H.-J. Drouhin</name>
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<front><div type="abstract" xml:lang="en">High-resolution energy distribution curves and spin polarization versus energy distribution curves from an AlInGaAs layer, capped by a heavily doped thin GaAs quantum well layer has been measured. Polarization P of up to 83% in conjunction with quantum yield Y=0.5% at T=130K has been obtained. These results are compared to polarization and quantum yield spectra at high excitation power. The narrow-band quantum well is shown to provide large effective negative electron affinity values with no harm to electron polarization. The studies in linear and nonlinear excitation regimes bring insight into the kinetics of photoemission and favor the photoemission model with elastic electron tunneling through the surface barrier. © 2003 American Institute of Physics.</div>
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Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements

Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri