Role of fluctuations in carrier transfer in semiconductor heterostructures
Identifieur interne : 000294 ( Russie/Analysis ); précédent : 000293; suivant : 000295Role of fluctuations in carrier transfer in semiconductor heterostructures
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Abstract
Influence of the electrical potential fluctuations on quantum transfer effects in semiconductor heterostructures is analyzed. It is shown that, contrary to the bulk 3D case, carriers capture by a quantum well or tunneling through a potential barrier is not characterized by optimal fluctuation. Spin-dependent tunneling in single-barrier nonmagnetic structures is shown to be insensitive to the fluctuations while in double-barrier structures fluctuations substantially reduce achievable spin polarization of the carriers. it is demonstrated that while for realistic AlGaAs heterostructures carriers capture by a quantum well keeps its resonance behavior, for presently actual InGaN-based heterostructures the capture probability becomes a smooth function of the quantum well parameters.
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Averkiev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>loffe Phvsico-Tecnical Institute RAS, Russian Academy of Sciences, Polytekhnicheskaya 26</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0313397</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0313397 INIST</idno><idno type="RBID">Pascal:06-0313397</idno><idno type="wicri:Area/Main/Corpus">008D13</idno><idno type="wicri:Area/Main/Repository">008478</idno><idno type="wicri:Area/Russie/Extraction">000294</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1098</idno><title level="j" type="abbreviated">Solid state commun.</title><title level="j" type="main">Solid state communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term><term>Charge carrier trapping</term><term>Charge transfer</term><term>Double barrier structure</term><term>Fluctuations</term><term>Gallium nitrides</term><term>Heterostructures</term><term>Indium nitrides</term><term>Potential barrier</term><term>Quantum wells</term><term>Semiconductor materials</term><term>Spin polarization</term><term>Spin polarized transport</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Piégeage porteur charge</term><term>Barrière potentiel</term><term>Transport polarisé en spin</term><term>Structure 2 barrières</term><term>Polarisation spin</term><term>Fluctuation</term><term>Effet tunnel</term><term>Transfert charge</term><term>Semiconducteur</term><term>Hétérostructure</term><term>Puits quantique</term><term>Aluminium arséniure</term><term>Gallium nitrure</term><term>Indium nitrure</term><term>AlGaAs</term><term>InGaN</term><term>7225</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Influence of the electrical potential fluctuations on quantum transfer effects in semiconductor heterostructures is analyzed. It is shown that, contrary to the bulk 3D case, carriers capture by a quantum well or tunneling through a potential barrier is not characterized by optimal fluctuation. Spin-dependent tunneling in single-barrier nonmagnetic structures is shown to be insensitive to the fluctuations while in double-barrier structures fluctuations substantially reduce achievable spin polarization of the carriers. it is demonstrated that while for realistic AlGaAs heterostructures carriers capture by a quantum well keeps its resonance behavior, for presently actual InGaN-based heterostructures the capture probability becomes a smooth function of the quantum well parameters.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1098</s0></fA01><fA02 i1="01"><s0>SSCOA4</s0></fA02><fA03 i2="1"><s0>Solid state commun.</s0></fA03><fA05><s2>138</s2></fA05><fA06><s2>10-11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Role of fluctuations in carrier transfer in semiconductor heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>ROZHANSKY (I. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>AVERKIEV (N. 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