IndiumV3, Russie, Analysis, bibRecord, 000217

Cathodoluminescent investigations of InxGa1-xN layers

Identifieur interne : 000217 ( Russie/Analysis ); précédent : 000216; suivant : 000218

Cathodoluminescent investigations of InxGa1-xN layers

Auteurs : RBID : Pascal:08-0517337

Descripteurs français

Pascal (Inist)
- Epitaxie jet moléculaire, Sonde électronique, Diffraction RX, Microscopie électronique balayage, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Fabrication microélectronique, 8115H, 0779, InxGa1-xN, InGaN, Cl.

English descriptors

KwdEn :
- Electron probe, Gallium nitride, Indium nitride, Microelectronic fabrication, Molecular beam epitaxy, Scanning electron microscopy, Ternary compound, X ray diffraction.

Abstract

The aim of this work was the investigation of the InGaN epilayers of various contents and various thickness; namely the influence of these two factors upon the cathodoluminescent (CL) properties. The studied epilayers were grown by plasma assisted molecular beam epitaxy. The samples were studied by electron probe microanalysis, CL, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Some interesting peculiarities of CL spectra were obtained; the nature of the CL bands is discussed.

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Pascal:08-0517337

Le document en format XML

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Ga<sub>1</sub>
-<sub>x</sub>
N layers</title>
<author><name sortKey="Domracheva, Yana V" uniqKey="Domracheva Y">Yana V. Domracheva</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Jmerik, Valentin N" uniqKey="Jmerik V">Valentin N. Jmerik</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
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<author><name sortKey="Popova, Tatiana B" uniqKey="Popova T">Tatiana B. Popova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Zamoryanskaya, Maria V" uniqKey="Zamoryanskaya M">Maria V. Zamoryanskaya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
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<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
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<seriesStmt><idno type="ISSN">0957-4522</idno>
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<title level="j" type="main">Journal of materials science. Materials in electronics</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron probe</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Microelectronic fabrication</term>
<term>Molecular beam epitaxy</term>
<term>Scanning electron microscopy</term>
<term>Ternary compound</term>
<term>X ray diffraction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Epitaxie jet moléculaire</term>
<term>Sonde électronique</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
<term>Composé ternaire</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Fabrication microélectronique</term>
<term>8115H</term>
<term>0779</term>
<term>InxGa1-xN</term>
<term>InGaN</term>
<term>Cl</term>
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<front><div type="abstract" xml:lang="en">The aim of this work was the investigation of the InGaN epilayers of various contents and various thickness; namely the influence of these two factors upon the cathodoluminescent (CL) properties. The studied epilayers were grown by plasma assisted molecular beam epitaxy. The samples were studied by electron probe microanalysis, CL, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Some interesting peculiarities of CL spectra were obtained; the nature of the CL bands is discussed.</div>
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-<sub>x</sub>
N layers</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)</s1>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC03 i1="11" i2="X" l="FRE"><s0>InxGa1-xN</s0>
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<s4>INC</s4>
<s5>83</s5>
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<s4>2007-09-09</s4>
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Cathodoluminescent investigations of InxGa1-xN layers

Cathodoluminescent investigations of InxGa1-xN layers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri