Etching and oxidation of InAs in planar inductively coupled plasma
Identifieur interne : 000161 ( Russie/Analysis ); précédent : 000160; suivant : 000162Etching and oxidation of InAs in planar inductively coupled plasma
Auteurs : RBID : Pascal:10-0346498Descripteurs français
- Pascal (Inist)
- Wicri :
- concept : Composé minéral.
English descriptors
- KwdEn :
Abstract
The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH4/H2/ Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 004197
- to stream Main, to step Repository: 005484
- to stream Russie, to step Extraction: 000161
Links to Exploration step
Pascal:10-0346498Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Etching and oxidation of InAs in planar inductively coupled plasma</title><author><name sortKey="Dultsev, F N" uniqKey="Dultsev F">F. N. Dultsev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name sortKey="Kesler, V G" uniqKey="Kesler V">V. G. Kesler</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0346498</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 10-0346498 INIST</idno><idno type="RBID">Pascal:10-0346498</idno><idno type="wicri:Area/Main/Corpus">004197</idno><idno type="wicri:Area/Main/Repository">005484</idno><idno type="wicri:Area/Russie/Extraction">000161</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Etching</term><term>Indium arsenides</term><term>Inductively coupled plasma</term><term>Inorganic compounds</term><term>Oxidation</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Gravure</term><term>Oxydation</term><term>Plasma couplé inductivement</term><term>Arséniure d'indium</term><term>Semiconducteur</term><term>As In</term><term>InAs</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH<sub>4</sub>/H<sub>2</sub>/ Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>256</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Etching and oxidation of InAs in planar inductively coupled plasma</s1></fA08><fA11 i1="01" i2="1"><s1>DULTSEV (F. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>KESLER (V. G.)</s1></fA11><fA14 i1="01"><s1>Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>246-250</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000181714220460</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0346498</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH<sub>4</sub>/H<sub>2</sub>/ Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Gravure</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Etching</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Oxydation</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Oxidation</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Plasma couplé inductivement</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Inductively coupled plasma</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fN21><s1>221</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000161 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000161 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:10-0346498
|texte= Etching and oxidation of InAs in planar inductively coupled plasma
}}
| This area was generated with Dilib version V0.5.77. |  |