IndiumV3, Russie, Analysis, bibRecord, 000110

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

Identifieur interne : 000110 ( Russie/Analysis ); précédent : 000109; suivant : 000111

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

Auteurs : RBID : Pascal:11-0078367

Descripteurs français

Pascal (Inist)
- Impulsion unique, Laser semiconducteur, Diode laser, Onde fuite, Hétérostructure, Gallium Arséniure, Indium Arséniure, InGaAs/GaAs, InGaP, Longueur cavité, 4255P.

English descriptors

KwdEn :
- Gallium Arsenides, Heterostructures, Indium Arsenides, Laser diodes, Leaky wave, Semiconductor lasers, Single pulse.

Abstract

A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°-2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.

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to stream Russie, to step Extraction: 000110

Links to Exploration step

Pascal:11-0078367

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern</title>
<author><name sortKey="Aleshkin, V Ya" uniqKey="Aleshkin V">V. Ya. Aleshkin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul'yanova 46</s1>
<s2>603950 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>603950 Nizhnii Novgorod</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Babushkina, T S" uniqKey="Babushkina T">T. S. Babushkina</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physicotechnical Scientific-Research Institute, N.I. Lobachevsky Nizhnii Novgorod State University, korp. 3, prosp. Gagarina 23</s1>
<s2>603600 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>603600 Nizhnii Novgorod</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Biryukov, A A" uniqKey="Biryukov A">A. A. Biryukov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physicotechnical Scientific-Research Institute, N.I. Lobachevsky Nizhnii Novgorod State University, korp. 3, prosp. Gagarina 23</s1>
<s2>603600 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>603600 Nizhnii Novgorod</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Dubinov, A A" uniqKey="Dubinov A">A. A. Dubinov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul'yanova 46</s1>
<s2>603950 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
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</inist:fA14>
<country>Russie</country>
<wicri:noRegion>603950 Nizhnii Novgorod</wicri:noRegion>
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</author>
<author><name sortKey="Zvonkov, B N" uniqKey="Zvonkov B">B. N. Zvonkov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physicotechnical Scientific-Research Institute, N.I. Lobachevsky Nizhnii Novgorod State University, korp. 3, prosp. Gagarina 23</s1>
<s2>603600 Nizhnii Novgorod</s2>
<s3>RUS</s3>
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<country>Russie</country>
<wicri:noRegion>603600 Nizhnii Novgorod</wicri:noRegion>
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</author>
<author><name sortKey="Kolesnikov, M N" uniqKey="Kolesnikov M">M. N. Kolesnikov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physicotechnical Scientific-Research Institute, N.I. Lobachevsky Nizhnii Novgorod State University, korp. 3, prosp. Gagarina 23</s1>
<s2>603600 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>603600 Nizhnii Novgorod</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Nekorkin, S M" uniqKey="Nekorkin S">S. M. Nekorkin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Physicotechnical Scientific-Research Institute, N.I. Lobachevsky Nizhnii Novgorod State University, korp. 3, prosp. Gagarina 23</s1>
<s2>603600 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>603600 Nizhnii Novgorod</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0078367</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 11-0078367 INIST</idno>
<idno type="RBID">Pascal:11-0078367</idno>
<idno type="wicri:Area/Main/Corpus">003726</idno>
<idno type="wicri:Area/Main/Repository">003D92</idno>
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<seriesStmt><idno type="ISSN">1063-7818</idno>
<title level="j" type="abbreviated">Quantum electron. : (Woodbury N.Y.)</title>
<title level="j" type="main">Quantum electronics : (Woodbury)</title>
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</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium Arsenides</term>
<term>Heterostructures</term>
<term>Indium Arsenides</term>
<term>Laser diodes</term>
<term>Leaky wave</term>
<term>Semiconductor lasers</term>
<term>Single pulse</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Impulsion unique</term>
<term>Laser semiconducteur</term>
<term>Diode laser</term>
<term>Onde fuite</term>
<term>Hétérostructure</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>InGaAs/GaAs</term>
<term>InGaP</term>
<term>Longueur cavité</term>
<term>4255P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°-2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7818</s0>
</fA01>
<fA03 i2="1"><s0>Quantum electron. : (Woodbury N.Y.)</s0>
</fA03>
<fA05><s2>40</s2>
</fA05>
<fA06><s2>10</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ALESHKIN (V. Ya.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BABUSHKINA (T. S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BIRYUKOV (A. A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>DUBINOV (A. A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ZVONKOV (B. N.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KOLESNIKOV (M. N.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>NEKORKIN (S. M.)</s1>
</fA11>
<fA14 i1="01"><s1>Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul'yanova 46</s1>
<s2>603950 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Physicotechnical Scientific-Research Institute, N.I. Lobachevsky Nizhnii Novgorod State University, korp. 3, prosp. Gagarina 23</s1>
<s2>603600 Nizhnii Novgorod</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA20><s1>855-857</s1>
</fA20>
<fA21><s1>2010</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16067</s2>
<s5>354000194591490030</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>6 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0078367</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Quantum electronics : (Woodbury)</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°-2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Impulsion unique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Single pulse</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Impulsión única</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>12</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Onde fuite</s0>
<s5>37</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Leaky wave</s0>
<s5>37</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Onda con fuga</s0>
<s5>37</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>47</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>InGaAs/GaAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>InGaP</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Longueur cavité</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>052</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri