| Ident. | Authors (with country if any) | Title |
|---|
| 000505 |
| Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys |
| 000713 |
| Quantum dot origin of luminescence in InGaN-GaN structures |
| 000759 |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000778 |
| lime-resolved studies of InGaN/GaN quantum dots |
| 000996 |
| Entropy-driven effects in self-organized formation of quantum dots |
| 000B48 |
| Quantum dots formed by ultrathin insertions in wide-gap matrices |
| 000C61 |
| Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser |
| 000C83 |
| Surface-mode lasing from stacked InGaN insertions in a GaN matrix |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000F90 |
| Energy relaxation by multiphonon processes in InAs/GaAs quantum dots |
