| Ident. | Authors (with country if any) | Title |
|---|
| 000674 |
| Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots |
| 000763 |
| Effect of the Growth Parameters on the Electron Structure of Quantum Dots in InGaAs/GaAs Heterostructures |
| 000766 |
| Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots |
| 000884 |
| 1.55-1.6 μm Electroluminescence of GaAs Based Diode Structures with Quantum Dots |
| 000955 |
| Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs |
| 000A36 |
| The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm |
| 000A62 |
| Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3-1.4 μm Wavelength Range |
| 000A89 |
| Multilayer Structures with Quantum Dots in the InAs/GaAs System Emitting at a Wavelength of 1.3 μm |
| 000C69 |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000D25 |
| Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates |
| 000D28 |
| Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix |
| 000D42 |
| Influence of composition and anneal conditions on the optical properties of (In,Ga)As quantum dots in an (Al,Ga)As matrix |
| 000D53 |
| Single transverse mode operation of long wavelength (approx. 1.3μm) InAs GaAs quantum dot laser |
| 000E07 |
| Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate |
| 000E57 |
| Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm |
| 001024 |
| Lateral association of vertically coupled quantum dots |
