Ident. | Authors (with country if any) | Title |
---|
000030 |
| Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures |
000057 |
| The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase |
000090 |
| Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor |
000165 |
| Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling |
000185 |
| The Ag2S-In2S3-Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6 |
000235 |
| Performance of InAs-based infrared photodiodes |
000354 |
| P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors |
000466 |
| MCT heteroepitaxial 4 × 288 FPA |
000581 |
| Anomalies in Static and Dynamic Conductivity of Indium Monoselenide |
000698 |
| 4x288 linear FPA on the Heteroepitaxial Hg1-xCdxTe Base |
000718 |
| Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers |
000804 |
| On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities |
000912 |
| Generation of Millimeter Radiation Due to Electric-Field-Induced Electron-Transit-Time Resonance in Indium Phosphide |
000C95 |
| Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them |
000D50 |
| Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing |
000E04 |
| Dielectric spectra and Vogel-Fulcher scaling in Pb(In0.5Nb0.5)O3 relaxor ferroelectric |
000E97 |
| Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots |
000E98 |
| Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering |
000F78 |
| "Intrinsic" transport properties of InSe studied by millimeter and submillimeter spectroscopy |
001027 |
| A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface |
001111 |
| Injection-amplification IR-photodiodes |