Ident. | Authors (with country if any) | Title |
---|
000031 |
| Structure of ordered oxide on InAs(100) surface |
000039 |
| Optical characterization of individual quantum dots |
000055 |
| Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations |
000167 |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
000169 |
| Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots |
000193 |
| Optical absorption of polarized light in InAs/GaSb quantum wells |
000205 |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
000230 |
| Recent developments in the III-nitride materials |
000280 |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
000357 |
| Optical properties of InN with stoichoimetry violation and indium clustering |
000358 |
| Optical properties of InN related to surface plasmons |
000379 |
| Effects of separate carrier generation on the emission properties of InAs/ GaAs quantum dots |
000396 |
| The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots |
000415 |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
000416 |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
000429 |
| Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties |
000438 |
| Weak antilocalization in quantum wells in tilted magnetic fields |
000454 |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
000460 |
| New peculiarities of interband tunneling in broken-gap heterostructures |
000464 |
| Mie resonances, infrared emission, and the band gap of InN |
000472 |
| InAs/Zn(Mn)Te/Cd(Mn)Se pseudomorphic quantum well structures for spintronic applications |
000478 |
| Electronic structures and transport properties of broken-gap heterostructures |
000479 |
| Electronic band structure and semimetal-semiconductor transition in InAs/GaSb quantum wells |
000482 |
| Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
000492 |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
000494 |
| A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields |
000512 |
| Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot |
000679 |
| Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation |
000700 |
| Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs |
000707 |
| Acceptor-induced threshold energy for the optical charging of InAs single quantum dots |
000712 |
| Correlation spectroscopy of excitons and biexcitons on a single quantum dot |
000725 |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
000808 |
| New anion-deficient cubic perovskites: Ba2In1-xCo1+xO5+δ (0 ≤ x ≤ 0.8) and Ba2-xLaxCoInO5+δ (0.2 ≤ x ≤ 0.8) |
000821 |
| Influence of band state mixing on interband magnetotunnelling in broken-gap heterostructures |
000859 |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
000967 |
| Novel compounds Sn10In14P22I8 and Sn14In10P21.2I8 with clathrate I structure: Synthesis and crystal and electronic structure |
000A69 |
| Optical transitions in broken gap heterostructures |
000B39 |
| Studying element vaporization and atomization processes in electrothermal atomizers by laser-excited atomic fluorescence spectrometry : Indium, matrix effects |
000B84 |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
000C03 |
| Cellular processing of 125I- and 111In-labeled epidermal growth factor (EGF) bound to cultured A431 tumor cells |
000C17 |
| Polaron Effects in Quantum Dots |
000C53 |
| Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning |
000D39 |
| Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions |
000D63 |
| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
001120 |
| Electronic g factor in biased quantum wells |
001231 |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
001290 |
| Picosecond pulse shaping using dynamic carrier heating in a gain-switched semiconductor laser |
001310 |
| Interaction of above-Fermi-edge magnetoexciton states from different subbands in dense two-dimensional electron magnetoplasma |
001426 |
| Fine structure in the photoluminescence line of a quasi-2D electron Landau level: Initial or final state origin? |