| Ident. | Authors (with country if any) | Title |
|---|
| 000049 |
| Coherent quantum phase slip |
| 000064 |
| Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching |
| 000069 |
| Orientation of the liquid crystalline nickel phthalocyanine films confined between electrodes |
| 000093 |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
| 000152 |
| InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications |
| 000182 |
| Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes |
| 000197 |
| Molecular Doping of Graphene |
| 000218 |
| Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure |
| 000239 |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor® |
| 000244 |
| Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells |
| 000258 |
| Electrical properties of dysprosium phthalocyanine films |
| 000266 |
| Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection |
| 000314 |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000323 |
| Dephasing of excited-state excitons in InGaAs quantum dots |
| 000324 |
| Deep muonium state in InSb : Recombination center vs. trapping center |
| 000345 |
| Resonant Raman spectroscopy on InN |
| 000431 |
| Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates |
| 000435 |
| XPS and XPD investigation of (1 1 2) CuInSe2 and Cu(InGa)Se2 surfaces |
| 000440 |
| Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain |
| 000443 |
| The time-resolved spectroscopy of InGaAs/AlGaAs heterostructures with asymmetric funnel-shape quantum wells for near- and mid-IR lasing |
| 000450 |
| Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure |
| 000451 |
| Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs |
| 000452 |
| Renewed interest in powder diffraction data indexing |
| 000480 |
| Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well |
| 000484 |
| Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons |
| 000511 |
| Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband |
| 000605 |
| Spatial mapping of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunnelling |
| 000632 |
| Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T |
| 000640 |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000644 |
| Interface luminescence and lasing at a type II single broken-gap heterojunction |
| 000648 |
| Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures |
| 000673 |
| Evolution of CuInSe2 (1 1 2) surface due to annealing: XPS study |
| 000674 |
| Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots |
| 000680 |
| Effective mass anisotropy of r-electrons in GaAs/AlGaAs quantum well with InAs layer |
| 000706 |
| Magneto-optical properties of charged excitons in quantum dots |
| 000715 |
| Photosensitivity of Structures Based on I-IIIn-VIm Ternary Compounds Containing Ordered Vacancies |
| 000752 |
| Optical switching in midinfrared light-emitting diodes |
| 000753 |
| Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy |
| 000765 |
| Polariton parametric scattering processes in semiconductor microcavities observed in continuous wave experiments |
| 000766 |
| Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots |
| 000788 |
| Structural transformations in the In5Bi3 compound under high pressure |
| 000801 |
| Optical nonlinearities in a microcavity with InGaN quantum wells: Self-assembled quantum dots approach |
| 000808 |
| New anion-deficient cubic perovskites: Ba2In1-xCo1+xO5+δ (0 ≤ x ≤ 0.8) and Ba2-xLaxCoInO5+δ (0.2 ≤ x ≤ 0.8) |
| 000818 |
| Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction |
| 000949 |
| Quantum magnetotransport at a type II broken-gap single heterointerface |
| 000951 |
| Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling |
| 000975 |
| Magneto-tunnelling spectroscopy for spatial mapping of orbital wavefunctions of the ground and excited electronic states in self-assembled quantum dots |
| 000A23 |
| Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots |
| 000A25 |
| Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection |
| 000A46 |
| Molecular Static Model of CuInSe2 Crystal: Energy Properties of Some Structural Defects |
| 000A53 |
| Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm |
| 000A67 |
| Stark shift in electroluminescence of individual InAs quantum dots |
| 000B00 |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000B25 |
| Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots |
| 000B37 |
| Theoretical analysis of strain distribution, carrier spectrum and gain in GaN-based hexagonal QDs |
| 000B62 |
| Misfit dislocations and radiative efficiency of InxGa1-xN/GaN quantum wells |
| 000B95 |
| EXAFS and electrical studies of new narrow-gap semiconductors : InTe1-xSex and In1-xGaxTe |
| 000C71 |
| Cavity-polariton dispersion and polarization splitting in single and coupled semiconductor microcavities |
| 000C73 |
| Excited states and selection rules in self-assembled InAs/GaAs quantum dots |
| 000C84 |
| Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering |
| 000C94 |
| Quasielastic light scattering in the near IR from photoexcited electron-hole plasma created in a GaAs layer with embedded InAs quantum dots |
| 000D23 |
| Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots |
| 000D58 |
| Pump-probe studies of photoluminescence of InP quantum wires embedded in dielectric matrix |
| 000D85 |
| InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature |
| 000D90 |
| High power 4.6 μm light emitting diodes for CO detection |
| 000D94 |
| Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots |
| 000D95 |
| Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots |
| 000E35 |
| Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots |
| 000E48 |
| Electronic structure of self-assembled InAs quantum dots in GaAs matrix |
| 000E50 |
| Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover |
| 000E63 |
| Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots |
| 000F36 |
| Light emission from electroluminescent Langmuir-Blodgett films of a polyester derived from oligothiophene |
| 000F38 |
| Langmuir-Blodgett films of amphiphilic cyanovinyl ferrocene derivatives and their electrochemical behaviour |
| 000F40 |
| Kinetics of dark excitons and excitonic trions in InGaAs single quantum well |
| 000F46 |
| Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux |
| 000F60 |
| Electrochemical properties of Langmuir-Blodgett films of polyesters derived from oligothiophenes |
| 000F61 |
| Electro- and photochemistry of 13-membered azocrowns in solution and as Langmuir-Blodgett films |
| 001017 |
| Optical properties of self-assembled arrays of InP quantum wires confined in nanotubes of chrysotile asbestos |
| 001043 |
| Interface phenomena and optical properties of structurally confined InP quantum wire ensembles. |
| 001046 |
| Effect of pressure on the 2D carrier concentration in GaSb/InAs/GaSb quantum well system |
| 001101 |
| Novel quantum confined structures via atmospheric pressure MOCVD growth in asbestos and opals |
| 001136 |
| Two-dimensional excitonic emission in InAs submonolayers |
| 001143 |
| Fourier-transform photoluminescence spectroscopy of excitons bound to group-III acceptors in silicon: Zeeman effect |
| 001187 |
| Molecular beam epitaxy growth kinetics for group III nitrides |
| 001198 |
| Effect of a doping impurity on the formation of structural defects in CdTe irradiated by electrons and ions |
| 001248 |
| Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates |
| 001309 |
| Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates |
| 001316 |
| Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures |
| 001336 |
| Response to Comment: ''Comment on 'Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces' '' [Appl. Phys. Lett. 66, 111 (1995)] |
| 001410 |
| Optical spectroscopic studies of InAs layer transformation on GaAs surfaces |
| 001411 |
| Observation of time-nonreversible optical interaction with zinc-blende semiconductors |
| 001427 |
| Magneto-optical properties in ultrathin InAs-GaAs quantum wells |
| 001431 |
| [001]- and piezoelectric-[111]-oriented InAs/GaSb structures under hydrostatic pressure |
| 001445 |
| Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces |
| 001459 |
| Coherent and incoherent specular inverse Faraday effect: χ(3) measurements in opaque materials |
