| Ident. | Authors (with country if any) | Title |
|---|
| 000028 |
| Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure |
| 000049 |
| Coherent quantum phase slip |
| 000072 |
| Monte Carlo simulations of the magnetocaloric effect in magnetic Ni-Mn-X (X = Ga, In) Heusler alloys |
| 000103 |
| On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys |
| 000112 |
| Langmuir-Blodgett Films of Pyridyldithio-Modified Multiwalled Carbon Nanotubes as a Support to Immobilize Hydrogenase |
| 000125 |
| Chemical analysis of a sulfur-treated InSb(111)A surface by XPS |
| 000200 |
| Magnetic properties of MnP nanowhiskers grown by MBE |
| 000211 |
| Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices |
| 000216 |
| Characterization of boron-doped diamonds using 11B high-resolution NMR at high magnetic fields |
| 000243 |
| Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces |
| 000257 |
| Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films |
| 000311 |
| Magnetoelastic effects and magnetic anisotropy in the intermediate-valence compound YbInCu4 |
| 000337 |
| Temperature behavior of hot carrier dynamics in InP quantum dots |
| 000344 |
| SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers |
| 000352 |
| Phonon-induced exciton dephasing in quantum dot molecules |
| 000355 |
| Optical spin polarization in double charged InAs self-assembled quantum dots |
| 000356 |
| Optical spin polarization and exchange interaction in doubly charged InAs self-assembled quantum dots |
| 000357 |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000358 |
| Optical properties of InN related to surface plasmons |
| 000364 |
| Modified Si(100)4 × 3-In nanocluster arrays |
| 000365 |
| MnGeP2 thin films grown by molecular beam epitaxy |
| 000378 |
| Electrochemical and spectral studies on the catalytic oxidation of nitric oxide and nitrite by high-valent manganese porphyrins at an ITO electrode |
| 000383 |
| Direct observation of the electron spin relaxation induced by nuclei in quantum dots |
| 000405 |
| Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures |
| 000415 |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000445 |
| Surfactant mediated growth of Sb clusters on Si(111) surface |
| 000453 |
| Quantum beats in semiconductor quantum dots |
| 000463 |
| Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction |
| 000464 |
| Mie resonances, infrared emission, and the band gap of InN |
| 000473 |
| High-field magnetostriction of the valence-fluctuating compound YbInCu4 |
| 000491 |
| Correlations between electrical and optical properties for OMVPE InN |
| 000492 |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000493 |
| Antiferroelectric phase transition in Sr9In(PO4)7 |
| 000504 |
| Intraband carrier relaxation in quantum dots embedded in doped heterostructures |
| 000534 |
| Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System |
| 000535 |
| Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique |
| 000589 |
| Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation |
| 000601 |
| Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface |
| 000612 |
| Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices |
| 000619 |
| Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys |
| 000622 |
| Optical spin polarization in negatively charged InAs self-assembled quantum dots under applied electric field |
| 000631 |
| Microdefects and point defects optically detected in Cu(In, Ga)Se2 thin film solar cells exposed to the damp and heating |
| 000635 |
| Magnetic anisotropy of pure and doped YbInCu4 compounds at ambient and high pressures |
| 000663 |
| Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences |
| 000666 |
| Gateable spin memory in InP quantum dots |
| 000690 |
| Band gap of hexagonal InN and InGaN alloys |
| 000691 |
| B-T phase diagram of pure and doped YbInCu4 |
| 000701 |
| Fine structure and spin quantum beats in InP quantum dots in a magnetic field |
| 000726 |
| Interferometric coherence measurement of stress-induced InxGa1-xAs/GaAs quantum dots at the resonant-luminescence phonon sideband |
| 000737 |
| Zero-field spin quantum beats in charged quantum dots |
| 000753 |
| Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy |
| 000779 |
| Whitlockite-related phosphates Sr9A(PO4)7(A=Sc, Cr, Fe, Ga, and In): Structure refinement of Sr9In(PO4)7 with synchrotron X-ray powder diffraction data |
| 000780 |
| Volume effect on the valence transition in Yb1-xRxInCu4 (R=Y, La, Ce, Lu) compounds |
| 000790 |
| Spin quantum beats in the Stokes shifted photoluminescence of InP quantum dots |
| 000849 |
| Band gap of hexagonal InN and InGaN alloys |
| 000850 |
| Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) |
| 000853 |
| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap |
| 000890 |
| Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy |
| 000909 |
| Breakdown of the Phonon Bottleneck Effect in Self-Assembled Quantum Dots |
| 000921 |
| Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field |
| 000950 |
| Quantum beats in photoluminescence of InP quantum dots in electric field |
| 000954 |
| Physical properties of InN with the band gap energy of 1.1 eV |
| 000958 |
| Phase transition and stability of Si(111)-8 × '2'-In surface phase at low temperatures |
| 000974 |
| Magnetoresistance and shubnikov-de Haas effect in magnetic ion-doped Bi2Se3 |
| 000A10 |
| Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence |
| 000A12 |
| Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses |
| 000A13 |
| Anisotropic superconductivity of InN grown by molecular beam epitaxy on sapphire (0001) |
| 000A40 |
| Atomic Structures of Two-Dimensional Strained InAs Epitaxial Layers on a GaAs(001) Surface: in situ Observation of Quantum Dot Growth |
| 000A49 |
| Dielectrically enhanced excitons in semiconductor-insulator quantum wires: Theory and experiment |
| 000A70 |
| Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses |
| 000A93 |
| Composition and Surface Structure of Quantum Chains on a In/Si(111) Surface |
| 000A97 |
| Parity violation in neutron resonances in 115In |
| 000B06 |
| Phase transitions of a simple hexagonal In0.2Sn0.8 alloy under high pressure |
| 000B49 |
| Quantitative STM investigation of the phase formation in submonolayer In/Si(111) system |
| 000B69 |
| LO phonon resonances in photoluminescence spectra of InP self-assembled quantum dots in electric field |
| 000B89 |
| Fabrication of an electrode-viologen-hydrogenase heterogeneous system and the electrochemical hydrogen evolution |
| 000C01 |
| Composition and atomic structure of the Si(111)√31 × √31-In surface |
| 000C02 |
| Coherent phonons in InSb and their properties from femtosecond pump-probe experiments |
| 000C05 |
| Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire |
| 000C06 |
| Atomic-hydrogen-induced self-organization of Si(111) √3 × √3-In surface phase studied by CAICISS and STM |
| 000C13 |
| "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation |
| 000C18 |
| Recharging instability and periodic domain structures in multiple quantum well infrared photodetectors |
| 000C19 |
| Recharging instability and periodic domain structures in multiple quantum well infrared photodetectors |
| 000C26 |
| Experimental and theoretical studies of phonons in hexagonal InN |
| 000C27 |
| Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current |
| 000C28 |
| Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions |
| 000C30 |
| X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots |
| 000D00 |
| Adsorption of atomic hydrogen on the Si(001) 4×3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy |
| 000D16 |
| Control of the bias tilt angles in nematic liquid crystals |
| 000D44 |
| Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer |
| 000D58 |
| Pump-probe studies of photoluminescence of InP quantum wires embedded in dielectric matrix |
| 000D65 |
| Phonon structure of InN grown by atomic layer epitaxy |
| 000E60 |
| Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction |
| 000E69 |
| Atomic hydrogen interaction with the Si(100)4×3-In surface studied by scanning tunneling microscopy |
| 000E71 |
| Structural model for the Si(100)4×3-In surface phase |
| 000F04 |
| Photoelectric properties of structures based on TlInS2 single crystals |
| 000F17 |
| The role of Si atoms in In/Si(111) surface phase formation |
| 000F33 |
| New structural model for the Si(111)4 x 1-In reconstruction |
| 000F73 |
| Atomic-hydrogen-induced self-organization processes of the In/Si(111) surface phases studied by scanning tunneling microscopy |
| 000F99 |
| STM tip-induced diffusion of In atoms on the Si(111)×-In surface |
| 001015 |
| Structural model for the Si(111)-4×1-In reconstruction |
| 001053 |
| Indium-induced Si(111)4×1 silicon substrate atom reconstruction |
| 001084 |
| Structural transformations at room temperature adsorption of In on Si(111)√3 x √3-In surface : LEED-AES-STM study |
| 001087 |
| Spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes |
| 001088 |
| Si(111)2 x 2-In ↔ Si(111)√3 x √3-In scanning tunneling microscope tip-induced structural transformation |
| 001089 |
| Si(100)4 x 3-in surface phase : identification of silicon substrate atom reconstruction |
| 001091 |
| STM observation of the atomic hydrogen adsorption on the Si(111)4 X 1-In surface |
| 001094 |
| Rapid and high concentrated permeation of Ga into InSb |
| 001283 |
| Valence-band changes in Sb2-xInxTe3 and Sb2Te3-ySey by transport and Shubnikov-de Haas effect measurements |
