| Ident. | Authors (with country if any) | Title |
|---|
| 000003 |
| Towards an Integrated Mode-Locked Microlaser Based on Two-Dimensional Photonic Crystals and Graphene |
| 000018 |
| New ternary indide La2Pd3In4 |
| 000026 |
| Ce2PdIng, Ce3PdIn11 and Ce5Pd2In19-members of homological series based on AuCu3- and PtHg2-type structural units |
| 000028 |
| Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure |
| 000030 |
| Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures |
| 000056 |
| Theory of g-factor enhancement in narrow-gap quantum well heterostructures |
| 000061 |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice |
| 000093 |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
| 000098 |
| Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY |
| 000109 |
| LiInSe2 nanosecond optical parametric oscillator tunable from 4.7 to 8.7 μm |
| 000124 |
| Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators |
| 000126 |
| Band structure at heterojunction interfaces of GaInP solar cells |
| 000144 |
| Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications |
| 000154 |
| III-phosphides heterojunction solar cell interface properties from admittance spectroscopy |
| 000171 |
| Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing |
| 000175 |
| Broadly tunable LiInSe2 optical parametric oscillator pumped by a Nd:YAG laser |
| 000196 |
| New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements |
| 000205 |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000211 |
| Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices |
| 000225 |
| The crystal structure of Ce16Ru8In37 |
| 000228 |
| Single crystal investigation of the ternary indides Ce2Pd4In5 and CePdIn4 |
| 000238 |
| Optical characterization of the LiInS2 and LiInSe2 crystals |
| 000244 |
| Interband light absorption and pauli blocking in InAs/GaAs quantum dots covered by InGaAs quantum wells |
| 000248 |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000263 |
| Crystal structure of the new ternary compound Ce3Ru2In3 |
| 000268 |
| Characterization of the mid-infrared nonlinear crystals LiInSe2 and LiInS2 in the IR range |
| 000270 |
| Ce2Ru2In3 and Ce3Ru2In2 : Site exchange in ternary indides of a new structure type |
| 000280 |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000286 |
| Spin relaxation of positive trions in InAs/GaAs quantum dots : the role of hyperfine interaction |
| 000289 |
| Single crystal investigation of Ce6Pd12In5 |
| 000299 |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000306 |
| Nonlinear optical properties of copper nanoparticles synthesized in indium tin oxide matrix by ion implantation |
| 000314 |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000319 |
| Fitting of crystal structure parameters of InAs under high pressure : quantitative XANES analysis using a multidimensional interpolation approach |
| 000322 |
| Diode laser spectroscopy of H2O and CO2 in the 1.877-μm region for the in situ monitoring of the martian atmosphere |
| 000327 |
| Chemically prepared well-ordered InP(001) surfaces |
| 000336 |
| Terahertz generation by plasma waves in nanometer gate high electron mobility transistors |
| 000345 |
| Resonant Raman spectroscopy on InN |
| 000353 |
| Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs |
| 000357 |
| Optical properties of InN with stoichoimetry violation and indium clustering |
| 000358 |
| Optical properties of InN related to surface plasmons |
| 000360 |
| Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure |
| 000369 |
| LiInSe2 nanosecond optical parametric oscillator |
| 000372 |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000383 |
| Direct observation of the electron spin relaxation induced by nuclei in quantum dots |
| 000414 |
| Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors |
| 000415 |
| Mie Resonances, Infrared Emission, and the Band Gap of InN |
| 000418 |
| Investigation of the Possibility of Obtaining Homogeneous Ga1 - xInxSb Crystals under Weak Flow Conditions |
| 000430 |
| Bulklike behavior of the optical anisotropy of cation-rich (001) surfaces of Ga1-xInxAs alloys |
| 000437 |
| Well-ordered (1 0 0) InAs surfaces using wet chemical treatments |
| 000452 |
| Renewed interest in powder diffraction data indexing |
| 000459 |
| Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures |
| 000464 |
| Mie resonances, infrared emission, and the band gap of InN |
| 000492 |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000540 |
| Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments |
| 000541 |
| Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001) |
| 000542 |
| Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements |
| 000561 |
| Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range |
| 000569 |
| Unconventional Magnetoresistance in Long InSb Nanowires |
| 000632 |
| Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self-assembled quantum dots: studies in magnetic fields up to 28 T |
| 000634 |
| Magnetoresistance in long InSb nanowires |
| 000640 |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000737 |
| Zero-field spin quantum beats in charged quantum dots |
| 000739 |
| LiInSe2: A biaxial ternary chalcogenide crystal for nonlinear optical applications in the midinfrared |
| 000786 |
| Study of the pyroelectricity in LiIns2 crystal |
| 000805 |
| Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy |
| 000814 |
| Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP |
| 000833 |
| Electron spin redistribution due to Pauli blocking in quantum dots and quantum wells |
| 000911 |
| Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations |
| 000926 |
| Excitonic contributions to the quantum-confined Pockels effect |
| 000951 |
| Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling |
| 000959 |
| Phase diagram and thermodynamic properties of phases in the In-Te system |
| 000976 |
| Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid |
| 000993 |
| Fine structure of excitons in high quality thin quantum wells |
| 000999 |
| Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface |
| 000A04 |
| Dynamical redistribution of mean electron spin over the energy spectrum of quantum dots |
| 000A22 |
| Quasi-one-dimensional transport in the extreme quantum limit of heavily doped n-InSb |
| 000B26 |
| Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation |
| 000B46 |
| Second harmonic generation in the lamellar ferrielectric CuInP2S6 |
| 000B55 |
| Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces |
| 000B65 |
| Luttinger-liquid-like transport in long InSb nanowires |
| 000B85 |
| Growth and characterization of LiInS2 single crystals |
| 000C47 |
| Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface |
| 000C71 |
| Cavity-polariton dispersion and polarization splitting in single and coupled semiconductor microcavities |
| 000C98 |
| Electron spin beats in InGaAs/GaAs quantum dots |
| 000D35 |
| Electron irradiation effects on the intersubband transitions in InGaAs/AlGaAs multiple quantum wells |
| 000D37 |
| Search for low-energy upscattering of ultracold neutrons from a beryllium surface |
| 000D83 |
| Interaction of low-density 2DEG with acoustic phonons |
| 000E81 |
| Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption |
| 000F13 |
| Two-dimensional electron gas at InAs(100)1 x 2/1 x 4 Pb |
| 000F40 |
| Kinetics of dark excitons and excitonic trions in InGaAs single quantum well |
| 001140 |
| Magnetoresistance size effects in a three-dimensional lattice of InSb quantum dots |
| 001142 |
| Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions |
| 001204 |
| Weak antilocalization and spin precession in quantum wells |
| 001206 |
| Theory of the de Haas-van Alphen effect in doped semiconductors |
| 001226 |
| Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures |
| 001231 |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
| 001277 |
| Identification of new nuclei at and beyond the proton drip line near the doubly magic nucleus 100Sn |
| 001320 |
| Tuning and breakdown of faceting under externally applied stress |
| 001437 |
| 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers |
