Ident. | Authors (with country if any) | Title |
---|
000031 |
| Structure of ordered oxide on InAs(100) surface |
000036 |
| Pecularities of Hall effect in GaAs/δ?Mn?/GaAs/InxGa1-xAs/ GaAs (x ≃ 0.2) heterostructures with high Mn content |
000049 |
| Coherent quantum phase slip |
000055 |
| Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations |
000064 |
| Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching |
000093 |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
000167 |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
000186 |
| Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells |
000212 |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs |
000587 |
| Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy |
000600 |
| Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy |
000F45 |
| InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range |
001106 |
| Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors |