| Ident. | Authors (with country if any) | Title |
|---|
| 000031 |
| Structure of ordered oxide on InAs(100) surface |
| 000049 |
| Coherent quantum phase slip |
| 000055 |
| Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations |
| 000064 |
| Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching |
| 000093 |
| Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system |
| 000167 |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 000186 |
| Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells |
| 000201 |
| MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures |
| 000212 |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs |
| 000224 |
| The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency |
| 000264 |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition |
| 000338 |
| Synchrotron X-ray topographic study of dislocations and stacking faults in InAs |
| 000587 |
| Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy |
| 000600 |
| Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy |
| 000F45 |
| InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range |
| 001106 |
| Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors |
