| Ident. | Authors (with country if any) | Title |
|---|
| 000010 |
| The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers |
| 000012 |
| Synthesis and thermochemistry of new phase BaCe0.7Nd0.2In0.1O2.85 |
| 000020 |
| Micro-Raman phonon scattering by InAs/AlAs quantum dot superlattices |
| 000024 |
| Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy |
| 000032 |
| Slowdown of atomic diffusion in liquid gallium-indium alloy under different nanoconfinements |
| 000054 |
| Tunnel injection emitter structures with barriers comprising nanobridges |
| 000066 |
| Quantum dot laser |
| 000070 |
| New mixed LiGa0.5In0.5Se2 nonlinear crystal for the mid-IR |
| 000071 |
| New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires |
| 000072 |
| Monte Carlo simulations of the magnetocaloric effect in magnetic Ni-Mn-X (X = Ga, In) Heusler alloys |
| 000075 |
| Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents |
| 000078 |
| Hot electron transport in heterostructures |
| 000079 |
| High-speed single-photon source based on self-organized quantum dots |
| 000092 |
| Thin film removal mechanisms in ns-laser processing of photovoltaic materials |
| 000097 |
| Quantum dots for single and entangled photon emitters |
| 000103 |
| On the electronic origin of the inverse magnetocaloric effect in Ni-Co-Mn-In Heusler alloys |
| 000109 |
| LiInSe2 nanosecond optical parametric oscillator tunable from 4.7 to 8.7 μm |
| 000120 |
| Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current |
| 000129 |
| Temperature dependent basic solid state physics luminescence from quantum dot arrays: phonon-assisted line broadening versus carrier escape-induced narrowing |
| 000130 |
| ZnO-nanorod arrays for solar cells with extremely thin sulfidic absorber |
| 000147 |
| Large scale magnetic field influence on trap recharging waves in InP:Fe and GaAs:Cr |
| 000168 |
| Conductors and Semiconductors for Advanced Organic Electronics |
| 000174 |
| Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters |
| 000175 |
| Broadly tunable LiInSe2 optical parametric oscillator pumped by a Nd:YAG laser |
| 000176 |
| Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment |
| 000189 |
| Quantum dot photonics : edge emitter, amplifier and VCSEL |
| 000190 |
| Quantum dot diode lasers for optical communication systems |
| 000197 |
| Molecular Doping of Graphene |
| 000219 |
| A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain |
| 000223 |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000227 |
| Solid-state spreading of oxides : Morphology and conductivity of In2O3-based films |
| 000239 |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor® |
| 000241 |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000243 |
| Junction formation of CuInSe2 with CdS: A comparative study of "dry" and "wet" interfaces |
| 000248 |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000254 |
| Electronic properties of the semiconductor RuIn3 |
| 000276 |
| Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots |
| 000285 |
| Strong and weak coupling of single quantum dot excitons in pillar microcavities |
| 000292 |
| Self-organized formation of shell-like InAs/GaAs quantum dot ensembles |
| 000300 |
| Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0 |
| 000305 |
| Nonlinear optical response and exciton dephasing in quantum dots |
| 000309 |
| Mode locking of electron spin coherences in singly charged quantum dots |
| 000312 |
| Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence |
| 000314 |
| Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells |
| 000318 |
| Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots |
| 000323 |
| Dephasing of excited-state excitons in InGaAs quantum dots |
| 000326 |
| Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots |
| 000328 |
| Characterisation of metal-organic semiconductor interfaces : In and Sn on CuPc |
| 000330 |
| 3D unsteady analysis of gas turbulent convection during HPLEC InP growth |
| 000331 |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000333 |
| Voltage-capacitance and admittance investigations of electron states in self-organized InAs/GaAs quantum dots |
| 000334 |
| Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates |
| 000338 |
| Synchrotron X-ray topographic study of dislocations and stacking faults in InAs |
| 000340 |
| Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1-xAs matrices |
| 000344 |
| SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers |
| 000346 |
| Refraction and absorption shadow imaging of the vacuum arc cathode spot at an atomic resonance line of cathode vapors |
| 000348 |
| QD lasers : Physics and applications |
| 000349 |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000352 |
| Phonon-induced exciton dephasing in quantum dot molecules |
| 000367 |
| Long-wavelength lasers based on metamorphic quantum dots |
| 000369 |
| LiInSe2 nanosecond optical parametric oscillator |
| 000372 |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000373 |
| High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence |
| 000386 |
| Chemistry and electronic properties of a metal-organic semiconductor interface : In on CuPc |
| 000392 |
| A single indium ion optical frequency standard |
| 000393 |
| A gauge invariant approach to the raman scattering in heavily doped crystals |
| 000395 |
| Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells |
| 000399 |
| Spectroscopy of Exciton States of InAs Quantum Molecules |
| 000403 |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 000405 |
| Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures |
| 000417 |
| Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy |
| 000429 |
| Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties |
| 000439 |
| Wavelength selective charge accumulation in self-organized InAs/GaAs quantum dots |
| 000441 |
| Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields |
| 000447 |
| Strong coupling in a single quantum dot-semiconductor microcavity system |
| 000452 |
| Renewed interest in powder diffraction data indexing |
| 000458 |
| Optical phonons in InAs and AlAs quantum dot structures |
| 000465 |
| Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances |
| 000470 |
| Interface phonons in InAs and AlAs quantum dot structures |
| 000485 |
| Effect of growth kinetics on the structural and optical properties of quantum dot ensembles |
| 000489 |
| Determination of band offsets in strained InxGa1-xAs/GaAs quantum wells by capacitance-voltage profiling and Schrödinger-poisson self-consistent simulation |
| 000490 |
| Dephasing in quantum dots: Quadratic coupling to acoustic phonons |
| 000492 |
| Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply |
| 000496 |
| Photoluminescence, depth profile, and lattice instability of hexagonal InN films |
| 000497 |
| Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation |
| 000499 |
| Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature |
| 000505 |
| Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys |
| 000513 |
| Electrically tunable mid-infrared electroluminescence from graded cascade structures |
| 000514 |
| Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm |
| 000524 |
| Synchrotron Investigations of an Electron Energy Spectrum in III-V-Based Nanostructures |
| 000539 |
| Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode |
| 000555 |
| Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix |
| 000570 |
| Complete suppression of filamentation and superior beam quality in quantum-dot lasers |
| 000579 |
| Coupling of point-defect microcavities in two-dimensional photonic-crystal slabs |
| 000584 |
| Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP |
| 000610 |
| Relation of the photorefraction and optical-damage resistance to the intrinsic defect structure in LiNbO3 crystals |
| 000611 |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000619 |
| Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys |
| 000621 |
| Phase transition in a tetragonal In90Pb10 alloy under high pressure: a switch from c/a > 1 to c/a < 1 |
| 000623 |
| Optical spin orientation under inter- and intra-subband transitions in QWs |
| 000625 |
| Optical memory concepts with self-organized quantum dots: material systems and energy-selective charging |
| 000630 |
| Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals |
| 000636 |
| MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates |
| 000639 |
| Localized and resonant shallow donor states in GaAs/InGaAs double-quantum-well heterostructures |
| 000640 |
| Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells |
| 000654 |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000668 |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000675 |
| Energy gap and optical properties of InxGa1-xN |
| 000690 |
| Band gap of hexagonal InN and InGaN alloys |
| 000706 |
| Magneto-optical properties of charged excitons in quantum dots |
| 000708 |
| Spectrotemporal response of 1.3 μm quantum-dot lasers |
| 000713 |
| Quantum dot origin of luminescence in InGaN-GaN structures |
| 000716 |
| The Influence of Heat Treatment Conditions on the Evaporation of Defect Regions in Structures with InGaAs Quantum Dots in the GaAs Matrix |
| 000733 |
| Unusual Behavior of the Lattice Thermal Conductivity and of the Lorenz Number in the YbIn1 - xCu4 + x System |
| 000734 |
| The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix |
| 000739 |
| LiInSe2: A biaxial ternary chalcogenide crystal for nonlinear optical applications in the midinfrared |
| 000742 |
| Behavior of the Lorenz Number in the Light Heavy-Fermion System YbInCu4 |
| 000743 |
| Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics |
| 000757 |
| Determination of the parameters of semiconducting CdF2:In with Schottky barriers from radio-frequency measurements |
| 000759 |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000761 |
| Solar Cells Based on CuIn1 - xGaxSe2 Films Obtained by Pulsed Laser Evaporation |
| 000778 |
| lime-resolved studies of InGaN/GaN quantum dots |
| 000789 |
| Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si |
| 000792 |
| Redox conversions of poly(3,4-ethylenedioxythiophene) and its copolymer with bithiophene in aprotic media of different donor capability |
| 000795 |
| Photoluminescence of isolated quantum dots in metastable InAs arrays |
| 000798 |
| Phase transitions under high pressure in binary Sn alloys (with In, Hg and Ga) |
| 000816 |
| Long-wavelength quantum-dot lasers |
| 000838 |
| Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors |
| 000848 |
| Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply |
| 000849 |
| Band gap of hexagonal InN and InGaN alloys |
| 000850 |
| Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) |
| 000853 |
| Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap |
| 000856 |
| 1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates |
| 000867 |
| Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature |
| 000885 |
| Strain engineering of self-organized InAs quantum dots |
| 000886 |
| Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser |
| 000895 |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000897 |
| Nuclear spectroscopy by means of (p,α) reactions on magic and near magic nuclei: 122Sn(p,α)119In |
| 000898 |
| Radio-frequency response of semiconducting CdF2:In crystals with Schottky barriers |
| 000903 |
| Optical parametric generation of femtosecond pulses up to 9 μm with LiInS2 pumped at 800 nm |
| 000904 |
| Theory of first-order isostructural valence phase transitions in the mixed valence compounds YbIn1-xAgxCu4 |
| 000935 |
| The impact of nuclear magnetism on superconductivity in a metal with nuclear electric quadrupole splitting: Indium |
| 000939 |
| Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces |
| 000943 |
| Self-assembled InAs quantum dots in an InGaAsN matrix on GaAs |
| 000945 |
| Reversibility of the island shape, volume and density in Stranski-Krastanow growth |
| 000946 |
| Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots |
| 000953 |
| Preparation of Bi2Sr2CaCu2O8+x-matrix composites containing fine strontium calcium indate inclusions via glass crystallization |
| 000956 |
| Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates |
| 000962 |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000964 |
| Optical and structural properties of self-organized InGaAsN/GaAs nanostructures |
| 000965 |
| On low temperature kinetic effects in metal-organic vapor phase epitaxy of III-V compounds |
| 000969 |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000978 |
| MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures |
| 000979 |
| Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN structures under optical pumping |
| 000980 |
| Large spectral splitting of TE and TM components of QDs in a microcavity |
| 000983 |
| Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties |
| 000984 |
| InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates |
| 000985 |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000987 |
| Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots |
| 000991 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000992 |
| Formation and investigation of photosensitive structures based on laser-deposited CuInSe2-2ZnSe films |
| 000995 |
| Face-centred cubic to tetragonal transitions in In alloys under high pressure |
| 000996 |
| Entropy-driven effects in self-organized formation of quantum dots |
| 000999 |
| Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface |
| 000A14 |
| Absolute frequency measurement of the In+ clock transition with a mode-locked femtosecond laser |
| 000A16 |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A17 |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A20 |
| 'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes |
| 000A21 |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A26 |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A27 |
| Absolute frequency measurement of the In+ clock transition with a mode-locked laser |
| 000A35 |
| The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes |
| 000A46 |
| Molecular Static Model of CuInSe2 Crystal: Energy Properties of Some Structural Defects |
| 000A47 |
| Generalized Multilayer Model for the Quantitative Analysis of the Electromodulation Components of the Electroreflectance and Photoreflectance Spectra of Semiconductors in the Region of the E0 Fundamental Transition |
| 000A59 |
| Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix |
| 000A66 |
| InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy |
| 000A74 |
| Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix |
| 000A82 |
| Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate |
| 000A84 |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A85 |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000A90 |
| Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells |
| 000A92 |
| Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications |
| 000A94 |
| Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm) |
| 000A96 |
| Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces |
| 000B00 |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000B04 |
| Exciton Luminescence of Quasi-Two-Dimensional Solid Solutions |
| 000B05 |
| Hole and electron emission from InAs quantum dots |
| 000B06 |
| Phase transitions of a simple hexagonal In0.2Sn0.8 alloy under high pressure |
| 000B12 |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B29 |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000B48 |
| Quantum dots formed by ultrathin insertions in wide-gap matrices |
| 000B77 |
| Induced photopleochroism of CuInSe2 structures prepared by heat treatment and deposition of CdS and In2O3 thin films |
| 000B78 |
| Indium segregation kinetics in InGaAs ternary compounds |
| 000B80 |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000B87 |
| Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers |
| 000C10 |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C11 |
| 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C14 |
| Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves |
| 000C15 |
| Optical anisotropy in vertically coupled quantum dots |
| 000C29 |
| Properties of two-dimensional electron gas containing self-organized quantum antidots |
| 000C34 |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C36 |
| Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures |
| 000C45 |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C49 |
| Thermal conductivity of YbInCu4 |
| 000C56 |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 |
| Gain characteristics of quantum-dot injection lasers |
| 000C61 |
| Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser |
| 000C65 |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C83 |
| Surface-mode lasing from stacked InGaN insertions in a GaN matrix |
| 000C92 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000C99 |
| Chemical effects during formation of the electronic surface structure of III-V semiconductors in a sulfide solution. |
| 000D03 |
| Surface of n-type InP (100) passivated in sulfide solutions |
| 000D04 |
| Strain-induced photoreflectance spectra in the vicinity of the E0 transition in GaAs/Si and InP/Si heterostructures |
| 000D05 |
| Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells |
| 000D09 |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D11 |
| Optical properties of InAs quantum dots in a Si matrix |
| 000D12 |
| Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs |
| 000D13 |
| Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices |
| 000D15 |
| Charge Conveyance and Nonlinear Acoustoelectric Phenomena for Intense Surface Acoustic Waves on a Semiconductor Quantum Well |
| 000D22 |
| Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D55 |
| Self-organized InAs quantum dots in a silicon matrix |
| 000D68 |
| Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE |
| 000D69 |
| Optical properties of thin films and quantum wells of InxGa1-xN/GaN and their dependence on laser irradiation |
| 000D71 |
| On the behavior of a dense indium oxide/yttria-stabilized zirconia electrode |
| 000D73 |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D80 |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000D82 |
| Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser |
| 000D87 |
| III-V compounds for solar cell applications : Thin film solar cells |
| 000D93 |
| Fourier analysis of X-ray rocking curves from superlattices |
| 000D95 |
| Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots |
| 000E06 |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E14 |
| Absolute frequency measurement of the 115In+ 5S2 1S0-5S5p 3P0 transition |
| 000E18 |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000E19 |
| Decay properties of ground-state and isomer of 103In |
| 000E20 |
| Beta-decay of 103In studied by using a total absorption spectrometer |
| 000E21 |
| Beta strength distribution in neutron-deficient nuclei |
| 000E25 |
| Millimeter wave generation by a self-sustained current oscillation in an InGaAs/InAlAs superlattice |
| 000E27 |
| Influence of Zn/In codoping on the optical properties of lithium niobate |
| 000E36 |
| Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy |
| 000E37 |
| Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots |
| 000E49 |
| Exciton complexes in InxGa1-xAs/GaAs quantum dots |
| 000E58 |
| Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C |
| 000E62 |
| Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers |
| 000E72 |
| Size dependence of exciton-exciton scattering in semiconductor quantum wires |
| 000E73 |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000E74 |
| Excitons in near-surface quantum wells in magnetic fields: Experiment and theory |
| 000E75 |
| Structural characterization of self-organized nanostructures |
| 000E78 |
| Magnetic excitons in near-surface quantum wells: experiment and theory |
| 000E87 |
| Intraband transitions in magnetoexcitons in coupled double quantum wells |
| 000E90 |
| Crystal structure of InBi under pressure up to 75 GPa |
| 000F07 |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F13 |
| Two-dimensional electron gas at InAs(100)1 x 2/1 x 4 Pb |
| 000F18 |
| Superconductivity and crystallographic transitions of InBi under pressure |
| 000F28 |
| Phase compatibility and preparation of Bi-2212-Sr1-xCaxIn2O4 composite |
| 000F30 |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F31 |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 |
| Lateral association of vertically-coupled quantum dots |
| 000F40 |
| Kinetics of dark excitons and excitonic trions in InGaAs single quantum well |
| 000F43 |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F44 |
| Influence of In doping on the refractive indices of lithium niobate |
| 000F50 |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 000F52 |
| Formation of InAs quantum dots on a silicon (100) surface |
| 000F67 |
| Charge carrier mobility in poly(p-phenylenevinylene) |
| 000F82 |
| Enhanced exciton-phonon scattering in InxGa1-xAs/GaAs quantum wires |
| 000F90 |
| Energy relaxation by multiphonon processes in InAs/GaAs quantum dots |
| 000F91 |
| Near field scanning optical spectroscopy of InP single quantum dots |
| 001005 |
| Quantum-dot lasers: Principal components of the threshold current density |
| 001008 |
| Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities |
| 001020 |
| Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells |
| 001028 |
| Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure |
| 001032 |
| Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix |
| 001034 |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001037 |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001039 |
| Excitonic wave packets in In0.135Ga0.865As/GaAs quantum wires |
| 001043 |
| Interface phenomena and optical properties of structurally confined InP quantum wire ensembles. |
| 001044 |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001051 |
| Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction |
| 001060 |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001061 |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 001062 |
| Modulation of a quantum well potential by a quantum-dot array |
| 001067 |
| Vibrational spectroscopy of indium-doped Pb0.9Mn0.1Te alloy |
| 001068 |
| Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency |
| 001085 |
| Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques |
| 001092 |
| Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots |
| 001095 |
| Radiation characteristics of injection lasers based on vertically coupled quantum dots |
| 001114 |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
| 001115 |
| High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots |
| 001116 |
| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
| 001119 |
| Far-infrared spectroscopy of localized states in indium doped PbTe and Pb1-xAxTe (Ax = Mn0.017; Sn0.18) alloys |
| 001126 |
| Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces |
| 001133 |
| Analysis of vaporization kinetics of group-III nitrides |
| 001139 |
| Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing |
| 001146 |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
| 001150 |
| Identification of radiative recombination channels in quantum dot structures |
| 001153 |
| Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth |
| 001156 |
| Outgoing excitonic resonance in resonant Raman scattering in a magnetic field |
| 001158 |
| Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix |
| 001161 |
| Optical emission range of structures with strained InAs quantum dots in GaAs |
| 001168 |
| Dielectric enhancement of excitons in near-surface quantum wells |
| 001174 |
| Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells |
| 001184 |
| High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μm |
| 001195 |
| Nature of optical transitions in self-organized InAs/GaAs quantum dots |
| 001196 |
| Transformation of the magnetic state in Yb0.5In0.5Cu2 in a first-order phase transition |
| 001205 |
| Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment |
| 001210 |
| An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix |
| 001211 |
| A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds |
| 001212 |
| Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots |
| 001277 |
| Identification of new nuclei at and beyond the proton drip line near the doubly magic nucleus 100Sn |
| 001284 |
| Outgoing excitonic resonance in multiphonon Raman scattering from polar semiconductors |
| 001285 |
| Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells |
| 001301 |
| Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface |
| 001314 |
| Ultranarrow Luminescence Lines from Single Quantum Dots |
| 001315 |
| Structural characterization of (In,Ga)As quantum dots in a GaAs matrix |
| 001319 |
| Electron-Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum Dots |
| 001320 |
| Tuning and breakdown of faceting under externally applied stress |
| 001322 |
| Study of short-lived tin isotopes with a laser ion source |
| 001331 |
| Linear polarization of photoluminescence emission and absorption in quantum-well wire structures: Experiment and theory |
| 001399 |
| Renormalization effects in the dense neutral magnetoplasma of quantum wells with two filled subbands |
| 001413 |
| Exciton mixing in the magnetophotoluminescence excitation spectra of shallow strained InxGa1-xAs/GaAs quantum wells |
| 001415 |
| Optical-damage-resistant impurities in lithium niobate |
| 001428 |
| Time-resolved investigations of excitonic recombination in highly strained InAs/Al0.48In0.52As quantum wells |
| 001465 |
| Electron energy loss spectroscopy in metallic indium |
