| Ident. | Authors (with country if any) | Title |
|---|
| 000024 |
| Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy |
| 000049 |
| Coherent quantum phase slip |
| 000053 |
| Unconventional quantum criticality in the pressure-induced heavy-fermion superconductor CeRhIn5 |
| 000087 |
| Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices |
| 000092 |
| Thin film removal mechanisms in ns-laser processing of photovoltaic materials |
| 000111 |
| Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties |
| 000169 |
| Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots |
| 000177 |
| Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells |
| 000202 |
| Isotropic quantum scattering and unconventional superconductivity |
| 000250 |
| Growth of InN films and nanorods by H-MOVPE |
| 000252 |
| From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN |
| 000256 |
| Electron statistics and cluster formation in CdF2 semiconductors with DX-centers |
| 000280 |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000285 |
| Strong and weak coupling of single quantum dot excitons in pillar microcavities |
| 000287 |
| Spin interactions in InAs quantum dots and molecules |
| 000293 |
| Room temperature ferromagnetism in III-V and II-IV-V2 dilute magnetic semiconductors |
| 000295 |
| Resonant Raman scattering in InGaN alloys |
| 000301 |
| Photoluminescence of n-InN with low electron concentrations |
| 000302 |
| Optical signatures of coupled quantum dots |
| 000303 |
| Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation |
| 000309 |
| Mode locking of electron spin coherences in singly charged quantum dots |
| 000324 |
| Deep muonium state in InSb : Recombination center vs. trapping center |
| 000331 |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000336 |
| Terahertz generation by plasma waves in nanometer gate high electron mobility transistors |
| 000341 |
| Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum |
| 000345 |
| Resonant Raman spectroscopy on InN |
| 000348 |
| QD lasers : Physics and applications |
| 000350 |
| Polarized fine structure in the photoluminescence excitation spectrum of a negatively charged quantum dot |
| 000351 |
| Polarization spectroscopy of positive and negative trions in an InAs quantum dot |
| 000353 |
| Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs |
| 000358 |
| Optical properties of InN related to surface plasmons |
| 000359 |
| Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers |
| 000361 |
| NQR and T1 studies of the high-pressure phase in YbInCu4 |
| 000366 |
| Manifestation of the equilibrium hole distribution in photoluminescence of n-InN |
| 000379 |
| Effects of separate carrier generation on the emission properties of InAs/ GaAs quantum dots |
| 000391 |
| Acceptor states in the photoluminescence spectra of n-InN |
| 000398 |
| Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups |
| 000414 |
| Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors |
| 000433 |
| Photoconductivity of Lead Telluride-Based Doped Alloys in the Submillimeter Wavelength Range |
| 000441 |
| Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields |
| 000447 |
| Strong coupling in a single quantum dot-semiconductor microcavity system |
| 000456 |
| Photoreflection from a locally optically pumped semiconductor laser structure |
| 000468 |
| Large single crystals of gallium selenide: growing, doping by In and characterization |
| 000481 |
| Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity |
| 000482 |
| Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
| 000505 |
| Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys |
| 000512 |
| Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot |
| 000546 |
| Magnetic Susceptibility and Superconductivity of (Pb0.2Sn0.8)1 - xInxTe Alloys as a Function of In Content |
| 000549 |
| Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP2 |
| 000550 |
| The red σ2/kT spectral shift in partially disordered semiconductors |
| 000552 |
| Photosensitive Structures Based on CdGa2Se4 Single Crystals |
| 000563 |
| Injection cascade lasers with graded gap barriers |
| 000576 |
| Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals |
| 000584 |
| Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP |
| 000590 |
| Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold |
| 000593 |
| Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures |
| 000604 |
| Specific heat, magnetic susceptibility and resistivity of In-doped Sn0.8Pb0.2Te |
| 000613 |
| Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys |
| 000630 |
| Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals |
| 000637 |
| MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells |
| 000661 |
| High-mobility InAs/AlSb heterostructures for spintronics applications |
| 000670 |
| Fascinating transformations of donor-acceptor complexes of group 13 metal (Al, Ga, In) derivatives with nitriles and isonitriles: From monomeric cyanides to rings and cages |
| 000676 |
| Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6 |
| 000679 |
| Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation |
| 000683 |
| Effect of spin-orbit interaction on cyclotron resonance in inas quantum wells |
| 000690 |
| Band gap of hexagonal InN and InGaN alloys |
| 000704 |
| MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells |
| 000706 |
| Magneto-optical properties of charged excitons in quantum dots |
| 000707 |
| Acceptor-induced threshold energy for the optical charging of InAs single quantum dots |
| 000727 |
| 6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm |
| 000749 |
| Growth of GaInNAs quaternaries using a digital alloy technique |
| 000754 |
| Nuclear spin-lattice relaxation by optically bistable defects in CdF2:In |
| 000756 |
| Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing |
| 000767 |
| Modeling cross-hatch surface morphology in growing mismatched layers |
| 000816 |
| Long-wavelength quantum-dot lasers |
| 000822 |
| Indium segregation kinetics in MOVPE of InGaN-based heterostructures |
| 000830 |
| Experimental and theoretical X-ray K-spectra of sulfur of zincblende-based compounds AgGaS2-CdGa2S4-InPS4 |
| 000831 |
| Entropy first order transition in YbInCu4 |
| 000836 |
| Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers |
| 000847 |
| Control by an electric field of electron-hole separation in type-II heterostructures |
| 000848 |
| Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply |
| 000849 |
| Band gap of hexagonal InN and InGaN alloys |
| 000850 |
| Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1) |
| 000856 |
| 1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates |
| 000857 |
| Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN |
| 000886 |
| Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser |
| 000890 |
| Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy |
| 000896 |
| Comment on Phonon modes in spontaneously ordered GaInP2 studied by micro-Raman scattering measurements |
| 000932 |
| The pillared layered framework of Ba3(In1-xMx)2(HXO4)6 (0 ≤ x ≤ 1; M = Fe, Cr; X = P, As) : synthesis, crystal structure, thermal stability and Mössbauer spectroscopy |
| 000937 |
| Surface segregation in group-III nitride MBE |
| 000947 |
| Radiation-induced defects in n-type GaN and InN |
| 000977 |
| MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source |
| 000991 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000993 |
| Fine structure of excitons in high quality thin quantum wells |
| 000A06 |
| DX center gratings in real-time holography |
| 000A17 |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A26 |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A28 |
| Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface |
| 000A97 |
| Parity violation in neutron resonances in 115In |
| 000B07 |
| Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model |
| 000B30 |
| X-ray K-absorption spectra of phosphorus and sulfur in InPS4: experiment and theory |
| 000B32 |
| Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode |
| 000B33 |
| Threshold characteristics of InGaAsP/InP multiple quantum well lasers |
| 000B43 |
| Spin-polarized electron transport and emission from strained superlattices |
| 000B58 |
| Optical gain in InAs/InGaAs quantum-dot structures : Experiments and theoretical model |
| 000B59 |
| Observation of superconducting and structural phase transitions in Sn1-zGezTe :In solid solutions |
| 000B68 |
| LPE growth of GaSb and Sb-based solid solutions |
| 000B83 |
| High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films |
| 000B88 |
| First-order valence transition in YbInCu4 in the (B, T)-plane |
| 000B93 |
| Electron drift velocity of the two-dimensional electron gas in compound semiconductors |
| 000B99 |
| DNA cleavage by 111In-labeled oligodeoxyribonucleotides |
| 000C05 |
| Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire |
| 000C16 |
| Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells |
| 000C22 |
| Superradiance in semiconductors |
| 000C38 |
| Production and properties of In/HgGa2S4 Schottky barriers |
| 000D13 |
| Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices |
| 000D82 |
| Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser |
| 000E19 |
| Decay properties of ground-state and isomer of 103In |
| 000E20 |
| Beta-decay of 103In studied by using a total absorption spectrometer |
| 000E21 |
| Beta strength distribution in neutron-deficient nuclei |
| 000E30 |
| Erratum: Radiation emitted by quantum-well InGaAs structures I. Spontaneous emission spectra [Semiconductors 32, 423-427 (April 1998)] |
| 000E75 |
| Structural characterization of self-organized nanostructures |
| 000E82 |
| Anomalous behavior of excitons at light holes in strained (In,Ga)As/GaAs heterostructures |
| 000E99 |
| Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors |
| 000F03 |
| Effect of matrix on InAs self-organized quantum dots on InP substrate |
| 000F14 |
| Trapezoidal delta-doped superlattice for far-infrared detection |
| 000F32 |
| Observation of a martensitic transition in the Raman spectra of spontaneously ordered GaInP alloys |
| 000F34 |
| Mechanochemical synthesis of indium-tin oxide powder |
| 000F57 |
| Emission from quantum-well InGaAs structures |
| 000F76 |
| A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxy |
| 001000 |
| Self-consistent modeling of the current-voltage characteristics of resonant tunneling structures with type II heterojunctions |
| 001016 |
| Resonant Faraday rotation in a semiconductor microcavity |
| 001028 |
| Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure |
| 001036 |
| Transport anisotropy in spontaneously ordered GaInP2 alloys |
| 001052 |
| Lattice vibrations and phonon-plasmon coupling in Raman spectra of p-type In0.53Ga0.47As |
| 001074 |
| The influence of structural relationship on extended solid solubility at mechanical alloying |
| 001093 |
| Reaction of nanocrystalline mechanically alloyed Cu-Sn alloy with Ga-In-Sn eutectic |
| 001142 |
| Quantum wells with zero valence-band offset: Drastic enhancement of forbidden excitonic transitions |
| 001182 |
| Low frequency noise in two-dimensional metal-semiconductor field effect transistor |
| 001204 |
| Weak antilocalization and spin precession in quantum wells |
| 001213 |
| Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride |
| 001225 |
| Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents |
| 001231 |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
| 001248 |
| Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates |
| 001266 |
| An investigation of the multicarrier transport properties of δ-doped InSb at high temperatures using a mobility spectrum technique |
| 001319 |
| Electron-Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum Dots |
| 001400 |
| Hydrogen passivation effects in InGaAlP and InGaP |
| 001418 |
| Dielectric study of the electroclinic effect in the smectic-A phase |
