Wen-Chang Liao < Wen-Chau Liu < Wen-Che Huang

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]

Ident.	Authors (with country if any)	Title
000156 (2014)		Performance Enhancement on an InGaP/InGaAs PHEMT With an Electrophoretic Deposition Gate Structure
001D76 (2012)		Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors
002327 (2011)		Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire Substrates
002598 (2011)		Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction
004461 (2010)		Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor
004814 (2010)		Characteristics of an AlGaInP-Based Light Emitting Diode With an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure
004974 (2009)		Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
005353 (2009)		On an AlGaInP-Based Light-Emitting Diode With an ITO Direct Ohmic Contact Structure
005845 (2009)		On an AlGaInP Light-Emitting Diode With a Modulation-Doped Multiquantum-Well (MD-MQW) Structure
005A84 (2009)		On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
008370 (2006)		Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation
00AA73 (2004)		Characteristics of an InP-InGaAs-InGaAsP HBT
00B245 (2004)		Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure
00B249 (2004)		Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
00B663 (2004)		Comprehensive study of InGaP/AlxGa1-xAs/GaAs heterojunction bipolar transistors with different doping concentrations of AlxGa1-xAs graded layers
00BB95 (2004-03)		Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
00BE64 (2004)		Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
00C268 (2003-11)		Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
00CE53 (2003)		A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor
00D644 (2003)		Comparative study on dc characteristics of In0.49Ga0.51P-channel heterostructure field-effect transistors with different gate metals
00DC73 (2003-01)		Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures

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