W. J. Rowe < W. J. Schaff < W. J. Schirmer

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 84.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
002379 (2012)		Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
003155 (2011)		Hot carrier relaxation process in InGaN epilayers : Novel Gain Materials Based on III-V-N Compounds
004311 (2010)		In-vacancies in Si-doped InN
004523 (2010)		Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
004A70 (2009)		Electrical and electrothermal transport in InN: The roles of defects
004A85 (2010)		In rich In1-xGaxN: Composition dependence of longitudinal optical phonon energy
004A99 (2009)		Role of impurities and dislocations for the unintentional n-type conductivity in InN
005297 (2009)		Properties of native point defects in In1-xAlxN alloys
005303 (2009)		Surface electronic properties of Mg-doped InAIN alloys
005780 (2009)		A comparative study of electrical and optical properties of InN and In0.48Ga0.52N
006557 (2008)		Optical Hall Effect in Hexagonal InN
006567 (2008)		Surface electronic properties of n-and p-type InGaN alloys
006569 (2008)		Mg-doped InN and InGaN : Photoluminescence, capacitance-voltage and thermopower measurements
006614 (2008)		Growth, fabrication, and characterization of InGaN solar cells
006D05 (2008)		The influence of conduction band plasmons on core-level photoemission spectra of InN
006F70 (2007)		TEM studies of as-grown, irradiated and annealed InN films
006F83 (2007)		In-adlayers on non-polar and polar InN surfaces : Ion scattering and photoemission studies
007A72 (2007)		The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds
007C34 (2007)		Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies
007C35 (2007)		p-type InN and in-rich InGaN
008095 (2007)		Doping-dependence of subband energies in quantized electron accumulation at InN surfaces

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