Serveur d'exploration sur l'Indium - Corpus (Accueil)

Index « Auteurs » - entrée « V. V. Sherstnev »
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V. V. Shchennikov < V. V. Sherstnev < V. V. Shinde  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 60.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
003332 (2010) Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
00B659 (2004) The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes
00CE21 (2003) The influence of melt purification and structure defects on mid-infrared light emitting diodes
00D802 (2003) The effect of pressure on the radiative efficiency of InAs based light emitting diodes
00DB42 (2003-02-24) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 μm
00F775 (2002-04-22) Optical switching in midinfrared light-emitting diodes
00F913 (2002) High tunability and superluminescence in InAs mid-infrared light emitting diodes
011E06 (2000) Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy
012125 (2000-12-11) Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection
012438 (2000-11) InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I
012873 (2000) Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs
012945 (2000-09-20) Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
012A88 (2000-08-07) Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm
013B94 (2000) Powerful interface light emitting diodes for methane gas detection
013C22 (2000-02) Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
013D89 (1999) High power 4.6 μm light emitting diodes for CO detection
013F76 (1999-12) Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
014388 (1999-10) InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
014544 (1999-09) Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
014765 (1999-08) Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
014B91 (1999-07) Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it

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