T. Xu < T. Y. Chang < T. Y. Chi

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 47.
[0-20] [0 - 20][0 - 47][20-40]

Ident.	Authors (with country if any)	Title
009770 (2004)		An empirical modeling for refractive indices of InP-based quaternary compounds at photon energy near and above the bandgap
009F12 (2005)		Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x≥3 0rown by molecular beam epitaxy
00E151 (2002)		Electro-modulation spectroscopy and laser performance of an InGaAsP asymmetric multi-quantum-well structure
01A697 (1996)		Demonstration of wide-temperature-range electroabsorption modulation near 1.5 μm using coupled quantum wells
01BF18 (1995)		Nearly chirp-free electroabsorption modulation using InGaAs-InGaAlAs-InAlAs coupled quantum wells
01CE75 (1994)		Design and demonstration of weighted-coupling digital Y-branch optical switches in InGaAs/InGaAlAs electron transfer waveguides
01CF29 (1994)		Loss reduction in InGaAs/InGaAlAs quantum well electron transfer waveguides using ion implantation
01D757 (1993)		1.5-μm InGaAs/InAlGaAs quantum-well microdisk lasers
01E279 (1994-07-18)		Multilayers as microlabs for point defects: Effect of strain on diffusion in semiconductors
01E309 (1994-09-01)		Flat band current-voltage-temperature method for band-discontinuity determination and its application to strained InxGa1-xAs/In0.52Al0.48As heterostructures
01E794 (1993)		Comparison of pnp and npn InGaAlAs/InGaAs heterojunction bipolar transistors
01E806 (1993)		Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5-μm wavelength region
01E807 (1993)		Growth and characterization of novel multilayer heterostructures for the monolithic integration of resonant-cavity photodiodes and heterojunction bipolar transistors
01F606 (1993)		Determination of the valence band offset at the asymmetric GaAs/In0.53Ga0.47As interface by ultraviolet photoemission spectroscopy
01FD48 (1993)		Shallow p-type ohmic contact to Ga0.47In0.53As using Au/Ti/Mn/W
020F30 (1993)		Single-step bandgap control in InGaAs/InGaAlAs quantum well modulators via MeV implants
021165 (1992)		Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly resistive low temperature InAlAs epilayers
021501 (1991)		High quality GaInAs/AlGaInAs/AlInAs heterostructures on Si ion implanted semi-insulating InP substrates for novel high performance optical modulators
021502 (1991)		Effects of substrate orientation, pseudomorphic growth and supelattice on alloy scattering in modulation doped GaInAs
021543 (1990)		InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 μm
021632 (1992)		Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators

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