T. Nakamoto < T. Nakamura < T. Nakanishi

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List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
003907 (2010)		Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films
004F28 (2009)		Thickness dependence of superconductivity for In/Mo thin films
007250 (2007)		Growth of InN crystals with peculiar morphology by means of AP-HCVD : Computational fluid-dynamics simulation of the gas flowing in the reactor
007D72 (2007)		RF-MBE growth and structural characterization of cubic InN films on yttria-stabilized zirconia (001) substrates
008B32 (2006)		RF-MBE growth and structural characterization of cubic InN films on GaAs
00A815 (2004)		Ordering structure along the [001] direction of InA1As
00AA40 (2004)		Phase separation in InAlAs grown by MOVPE with a low growth temperature
00C410 (2003)		Preparation of CuIn(S, Se)2 thin films by thermal crystallization in sulfur and selenium atmosphere
00ED72 (2002)		Drop experiments on crystallization of InGaSb semiconductor
00FD86 (2001)		Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: Their possibility of high electron mobility transistor
010066 (2001)		High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits
013505 (1999)		Optimum design and fabrication of InAlAs/InGaAs HEMT's on GaAs with both high breakdown voltage and high maximum frequency of oscillation
014A13 (1999)		Annealing effects on lattice-strain-relaxed In0.5Al0.5As/In0.5Ga0.5A heterostructures grown on GaAs substrates
014C99 (1998)		Small-scaled InGaP/GaAs HBT's with WSi/Ti base electrode and buried SiO2
016851 (1998)		Measurement of gamma-ray production double-differential cross sections for the spallation reaction induced by 0.8, 1.5 and 3.0 GeV protons
016B22 (1998)		Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT's with platinum buried gates
017201 (1998)		High efficiency 0.5 W/A at 85 °C strained multiquantum well lasers entirely grown by MOVPE on p-InP substrate
017C29 (1997)		High speed InGaP/GaAs HBTs with fmax of 159 GHz
017D98 (1997)		High-speed InGaP/GaAs transistors with a sidewall base contact structure
019244 (1997)		Measurement of neutron-production double-differential cross sections for nuclear spallation reaction induced by 0.8, 1.5 and 3.0 GeV protons
019731 (1997)		Molecular beam deposition of n-type polycrystalline In0.6Ga0.4As for high resistances in heterojunction bipolar transistor integrated circuits

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