S. J. Choi < S. J. Chua < S. J. Chung

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 75.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
002D12 (2011)		Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs
002D80 (2011)		Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature
003995 (2010)		Stress relaxed nanoepitaxy GaN for growth of phosphor-free indium-rich nanostructures incorporated in apple-white LEDs
003F69 (2010)		Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
004943 (2009)		Optical Properties and Material Studies of InGaN/GaN Multi-Quantum Well Light Emitting Diode Wafers with Different Structures
005673 (2009)		Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures
005789 (2009)		Ambient temperature dependence basic so on emission spectrum of InAs quantum dots
006A34 (2008)		Temperature and injection current dependent electroluminescence study of GaInP/AlGaInP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine
006C91 (2008)		Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
006F04 (2007)		InNxAs1-x band gap energy and band bowing coefficient calculation
007712 (2007)		One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application
007795 (2007)		Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
007796 (2007)		Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
007804 (2007)		Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition
007912 (2007)		InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
007B19 (2007)		Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
008944 (2006)		Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
009059 (2006)		Bandgap engineering in semiconductor quantum dots
009163 (2006)		Transition of 3D to 2D growth modes of InAs grown on GaAs
009185 (2006)		MOCVD growth of 980 nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine
009961 (2005)		InGaAsP/GaInP/AlGaInP 0.8 μm QW lasers grown by MOCVD using TBP and TBAs

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