N. M. Stewart < N. M. Stus < N. M. Svishchenko

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 52.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
003E70 (2010)		Properties of mid-IR diodes with n-InAsSbP/n-InAs interface
003E91 (2010)		InGaAsSb LED arrays (λ = 3.7 μm) with Photonic Crystals
005446 (2009)		Midinfrared (λ= 3.6 μm) LEDs and arrays based on InGaAsSb with photonic crystals
007058 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
008E46 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
00C059 (2004-01)		Strongly Compensated InAs Obtained by Proton Irradiation
00CD20 (2003-08)		Negative Luminescence at 3.9 μm in InGaAsSb-Based Diodes
00D468 (2003)		Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3-4.3 μm spectral range
00D648 (2003)		InAs and InAsSb LEDs with built-in cavities
00EC46 (2002-08)		Lattice-Matched GaInPAsSb/InAs Structures for Devices of Infrared Optoelectronics
00EC78 (2002-08-12)		6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
00EE87 (2002-07)		Optically Pumped Immersion-Lens Infrared Light Emitting Diodes Based on Narrow-Gap III-V Semiconductors
00F598 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
010222 (2001-12-17)		Current crowding in InAsSb light-emitting diodes
010320 (2001-12)		Radiative Recombination via Direct Optical Transitions in In1 - xGaxAs (0 ≤ x ≤ 0.16) Solid Solutions
010865 (2001-10)		High Power InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.3 μm)
011506 (2001-05)		Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21)
011985 (2001-03)		Optically Pumped Mid-Infrared InGaAs(Sb) LEDs
011988 (2001-03)		Negative Luminescence in p-InAsSbP/n-InAs Diodes
012D26 (2000-07)		InGaAsSb(Gd)/InAsSbP Double Heterostructure Lasers (λ = 3.0-3.3 μm) for Diode Laser Spectroscopy
013863 (2000-04)		Spectral Characteristics of Lasers Based on InGaAsSb/InAsSbP Double Heterostructures (λ = 3.0-3.6 μm)

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