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Index « Auteurs » - entrée « N. A. Bert »
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N. A. Bernt < N. A. Bert < N. A. Bogner  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]
Ident.Authors (with country if any)Title
001001 (2013) TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
003A42 (2010) On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
003D98 (2010) Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
005383 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
007E62 (2007) Analysis of the local indium composition in ultrathin InGaN layers
00BE23 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
00CF85 (2003-07) Control over the Parameters of InAs-GaAs Quantum Dot Arrays in the Stranski-Krastanow Growth Mode
00FA09 (2002-03-25) Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
012247 (2000-12-01) Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
013A86 (2000-03) Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots
013C24 (2000-02) Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
014448 (1999-10-18) Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
014542 (1999-09) Spontaneously assembling periodic composition-modulated InGaAsP structures
014772 (1999-08) Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
014B39 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
014E47 (1999) Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status
015027 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures
015191 (1999-05-10) InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
015761 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
015820 (1999-02) Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates
015839 (1999-03-08) In-Ga intermixing in low-temperature grown GaAs delta doped with In

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