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Index « Auteurs » - entrée « M. S. Skolnick »
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M. S. Singh < M. S. Skolnick < M. S. Song  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 135.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
002930 (2011) Time resolved spectroscopy on quantum dots and graphene at the FELBE free-electron laser
003905 (2010) Two-color two-photon Rabi oscillation of biexciton in single InAs/GaAs quantum dot
004F84 (2009) Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole
007240 (2007) Coherent control of single quantum dot exciton embedded in a photodiode
007A11 (2007) Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection
008261 (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure
008464 (2006) Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy
008496 (2006) The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface
008601 (2005) Inversion of exciton level splitting in quantum dots
008A92 (2006) Fast spin relaxation in InGaN/GaN multiple quantum wells
008E24 (2006) Inversion of the exciton fine structure splitting in quantum dots
009510 (2005) Individual neutral and charged InxGa1-xAs-GaAs quantum dots with strong in-plane optical anisotropy
009A09 (2005) Ultrafast nonlinear response of AlGaAs/InAlGaAs MQW photonic crystal waveguides
009D82 (2005) Reflection and emission of Brillouin zone edge states for active photonic crystal waveguides
00A503 (2005) The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots
00A531 (2005) Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step
00A538 (2005) Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots
00A548 (2005) Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots
00A708 (2004) Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
00A755 (2004) Intraband relaxation via polaron decay in InAs self-assembled quantum dots
00B751 (2004-04-15) Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAs quantum dots

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