L. A. Carr < L. A. Coldren < L. A. Coryell

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 92.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
007854 (2007)		Cavity QED with quantum dots in semiconductor microcavities
008086 (2007)		Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures
008B04 (2006)		Optical design of InAlGaAs low-loss tunnel-junction apertures for long-wavelength vertical-cavity lasers
00A092 (2005)		>1000utput differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP
00AE30 (2004)		Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP
00B960 (2004)		Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers
00CB27 (2003)		Monolithically integrated Mach-Zehnder interferometer wavelength converter and widely tunable laser in InP
00D399 (2003)		Multimode interference-based two-stage 1 × 2 light splitter for compact photonic integrated circuits
00E188 (2002)		Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
00E425 (2002)		Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs
00E617 (2002)		Optical mode converter integration with InP-InGaAsP active and passive waveguides using a single regrowth process
00F481 (2002-05-13)		Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1-xAs quantum wells and lattice-matched AlxGayIn(1-x-y)As barriers using submonolayer superlattices
011854 (2001-03-26)		Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications
011B15 (2001-03-05)		88°C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers
012336 (2000-11-13)		Near-room-temperature continuous-wave operation of multiple-active-region 1.55 μm vertical-cavity lasers with high differential efficiency
012405 (2000)		Increased lateral oxidation rates of AlInAs on InP using short-period superlattices
012511 (2000-10-23)		Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench
012706 (2000)		Room-temperature, CW operation of lattice-matched long-wavelength VCSELs
012805 (2000)		Design of sampled grating DBR lasers with integrated semiconductor optical amplifiers
012B44 (2000)		Distributed feedback laser diodes employing embedded dielectric gratings located above the active region
013388 (1999)		Widely tunable sampled grating DBR laser with integrated electroabsorption modulator

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