K. Radhakrishana < K. Radhakrishnan < K. Radulovic

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 67.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
007794 (2007)		Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors
007802 (2007)		InGaAsP/InP long wavelength quantum well infrared photodetectors
007808 (2007)		Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation
009701 (2004)		Device stability of metamorphic InP/InGaAs heterojunction bipolar transistors by optical and electrical characterization
009750 (2004)		Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)
009768 (2004)		Characterization of mosaic structures in metamorphic InP layers grown on GaAs substrate by solid source molecular beam epitaxy
00AD08 (2004)		Temperature dependence of electron ionization coefficients of InGaP measured in InGaP/GaAs/InGaP DHBt's
00AD16 (2004)		A comparative study of metamorphic InP/InGaAs heterojunction bipolar transistors (MHBTs) grown by gas and solid source molecular beam epitaxy (MBE)
00AD73 (2004)		A compact analytical I-V model of AlGaAs/InGaAs/GaAs p-HEMTS based on non-linear charge control model
00B039 (2004)		Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded InxGa1-xP metamorphic buffer
00BD86 (2004)		Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy
00BF23 (2003)		Temperature Dependence of Avalanche Multiplication in InP-Based HBTs with InGaAs/InP Composite Collector: Device Characterization and Physics Model
00BF48 (2004)		The influence of emitter material on silicon nitride passivation-induced degradation in InP-based HBTs
00CB31 (2003)		Measurements of InGaP electron ionization coefficient using InGap-GaAs-InGaP double HBTs
00E734 (2002)		Growth and characterization of compositionally graded InGaP layers on GaAs substrate by solid-source molecular beam epitaxy
00E945 (2002)		Scaling of microwave noise and small-signal parameters of InP/InGaAs DHBT with high DC current gain
00EE35 (2002-02-28)		DC Characterization of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors at Elevated Temperature
00EE48 (2002-02-28)		Studies on the Degradation of InP/InGaAs/InP Double Heterojunction Bipolar Transistors Induced by Silicon Nitride Passivation
00F834 (2002)		InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
00FE46 (2001)		Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors
010218 (2001-11)		Metamorphic In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors on GaAs with InxGa1-xP graded buffer

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