J. Wrobel < J. Wu < J. Wuerfl

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 62.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
003750 (2010)		SELF-ASSEMBLING OF INAS QUANTUM DOTS ON GAAS(001) IN MOLECULAR BEAM EPITAXY
004625 (2010)		Finite element simulations of compositionally graded InGaN solar cells
004B10 (2010)		Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique
006160 (2008)		Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
006569 (2008)		Mg-doped InN and InGaN : Photoluminescence, capacitance-voltage and thermopower measurements
006D25 (2008)		Electroluminescence from ZnO nanowires with a p-ZnO film/n-ZnO nanowire homojunction
007591 (2007)		Effects of quantum confinement on the doping limit of semiconductor nanowires
008221 (2006)		MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
009104 (2006)		Native defects in InxGa1-xN alloys
009251 (2006)		Structure and electronic properties of InN and In-rich group III-nitride alloys
009995 (2005)		Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition
009A29 (2005)		Fermi-level stabilization energy in group III nitrides
00A720 (2005)		Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP (001)
00A919 (2004)		InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate
00AA53 (2004)		Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys
00AC28 (2004)		Optical properties and electronic structure of InN and In-rich group III-nitride alloys
00AC87 (2004)		Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
00BB35 (2004-04-12)		Effects of electron concentration on the optical absorption edge of InN
00BD11 (2004-03-15)		High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
00BE02 (2004)		Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE
00C211 (2003)		Narrow bandgap group III-nitride alloys

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