J. R. Melrose < J. R. Meyer < J. R. Mialichi

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 60.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
003034 (2011)		Room-temperature 4.0-μm broadened optical pumping injection cavity lasers
003C70 (2010)		Shallow-Etch Mesa Isolation of Graded-Bandgap "W"-Structured Type II Superlattice Photodiodes
005B52 (2009)		Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
006F33 (2007)		Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates
007227 (2007)		MCT-on-silicon negative luminescence devices with high efficiency
007E51 (2007)		Controlling interfacial disorder and strain of W-structured type-II superlattices using As2 flux
00AE00 (2004)		Fundamental materials studies of undoped, in-doped, and as-doped Hg1-xCdxTe
00C965 (2003-10-06)		(In)GaAsN-based type-II W quantum-well lasers for emission at λ=1.55 μm
00CC02 (2003-09-15)		Band parameters for nitrogen-containing semiconductors
00CF65 (2003-08-01)		Dependence of type II W mid-infrared photoluminescence and lasing properties on growth conditions
00D299 (2003-06-23)		Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoff
00D451 (2003)		MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells
00D757 (2003-03-15)		Spin-polarizing properties of the InAs/(AlSb)/GaMnSb/(AlSb)/InAs ferromagnetic resonant interband tunneling diode
00D840 (2003-04-07)		Ferromagnetic resonant interband tunneling diode
00E329 (2002-12)		MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
00EC78 (2002-08-12)		6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm
00EE49 (2002-02-28)		Characterizing Multi-Carrier Devices with Quantitative Mobility Spectrum Analysis and Variable Field Hall Measurements
010229 (2001-12-17)		GaInSb/InAs/AlGaAsSb W quantum-well light-emitting diodes
010975 (2001)		Type-II antimonide quantum wells for mid-infrared lasers
012547 (2000-10-15)		Suppression of Auger recombination in long-wavelength quantum well W-structure lasers
013730 (2000-04-15)		Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices

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