H. J. Leamy < H. J. Lee < H. J. Lewerenz

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 51.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
001669 (2012)		Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors
007806 (2007)		Luminescence and ultrafast phenomena in InGaN multiple quantum wells
009675 (2004)		Gas source MBE growth of Tl-containing semiconductors and their application to temperature-insensitive wavelength laser diodes
00A055 (2005)		V-defects and dislocations in InGaN/GaN heterostructures
00A091 (2005)		Absence of local-potential fluctuation effects in Si-doped InxGa1-xN epilayers studied by optical characterizations
00A118 (2005)		Electronic structures of p-phenylene biphenyltetracarboximide polyimide/indium-tin oxide heterostmctures grown on glass substrates for organic light-emitting devices
00A122 (2005)		Blue luminescence from the InGaN multiple quantum wells
00A159 (2005)		Characterization of AlGaN layer with high Al content grown by mixed-source HVPE
00AB40 (2004)		The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD
00AC41 (2004)		Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures
00AC67 (2004)		Impurity band in magnesium-doped GaN layers grown by metalorganic chemical vapor deposition
00AD78 (2003)		Temperature-insensitive wavelength TlLnGaAs semiconductor lasers
00AE40 (2004)		Influence of annealing and surfactant on InGaAsN/GaAs multiple quantum well
00B352 (2004)		Effects of etching depth for n-contact and current spreading layer in InGaN/GaN light emitting diodes
00B355 (2004)		Anomalous current-voltage characteristics of InGaN/GaN light-emitting diodes depending on Mg flow rate during p-GaN growth
00B599 (2004)		Influence of Sb doping on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells grown by metalorganic chemical vapor deposition
00C042 (2003)		Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes
00C254 (2004-01-05)		Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer
00D304 (2003)		Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operation
00D743 (2003-04-28)		Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells
00D884 (2003-04-15)		Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells

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